MT28F800B5WG-8 T Micron Technology Inc, MT28F800B5WG-8 T Datasheet

IC FLASH 8MBIT 80NS 48TSOP

MT28F800B5WG-8 T

Manufacturer Part Number
MT28F800B5WG-8 T
Description
IC FLASH 8MBIT 80NS 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT28F800B5WG-8 T

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
80ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
FLASH MEMORY
FEATURES
• Eleven erase blocks:
• Eight main memory blocks
• Smart 5 technology (B5):
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and SOP packaging options
• Byte- or word-wide READ and WRITE
Notes:
09005aef8075d1ec
MT28F800B5_4.fm - Rev. 4, Pub. 2/2004
OPTIONS
• Configurations
• Boot Block Starting Word Address
• Operating Temperature Range
• Packages
Timing
80ns
1 Meg x 8
512K x 16/1 Meg x 8
Top
Bottom
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
MT28F008B5
Plastic 40-pin (standard) TSOP Type I
Plastic 40-pin (lead free) TSOP Type I
MT28F800B5
Plastic 48-pin (standard) TSOP Type I
Plastic 48-pin (lead free) TSOP Type I
Plastic 44-pin (standard) SOP
Plastic 44-pin (lead free) SOP
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
5V ±10% V
5V ±10% V
(MT28F800B5, 1 Meg x 8/512K x 16)
production programming
1. This generation of devices does not support 12V V
2. Contact factory for availability.
compatibility production programming; however, 5V
V
with no loss of performance.
PP
application production programming can be used
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MT28F800B5WG-8 BET
CC
PP
Part Number Example:
application/
1
MARKING
MT28F008B5
MT28F800B5
None
WG
SG
WP
SP
ET
VG
VP
-8
T
B
2
2
SMART 5 BOOT BLOCK FLASH MEMORY
PP
1
GENERAL DESCRIPTION
are nonvolatile, electrically block-erasable (Flash),
programmable
8,388,608 bits organized as 524,288 words (16 bits) or
1,048,576 bytes (8 bits). Writing or erasing the device is
done with a 5V V
performed with a 5V V
advances, 5V V
duction programming. These devices are fabricated
with Micron’s advanced 0.18µm CMOS floating-gate
process.
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code
implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
flash) for the latest data sheet.
MT28F008B5
MT28F800B5
5V Only, Dual Supply (Smart 5)
0.18µm Process Technology
40-Pin TSOP Type I
The MT28F008B5 (x8) and MT28F800B5 (x16/x8)
The MT28F008B5 and MT28F800B5 are organized
Please refer to Micron’s Web site
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PP
read-only
PP
is optimal for application and pro-
44-Pin SOP
voltage, while all operations are
CC
. Due to process technology
48-Pin TSOP Type I
memories
2
(www.micron.com/
©2002 Micron Technology Inc.
containing
8Mb

Related parts for MT28F800B5WG-8 T

MT28F800B5WG-8 T Summary of contents

Page 1

... V application production programming can be used PP with no loss of performance. 2. Contact factory for availability. Part Number Example: MT28F800B5WG-8 BET 09005aef8075d1ec MT28F800B5_4.fm - Rev. 4, Pub. 2/2004 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 5 BOOT BLOCK FLASH MEMORY MT28F008B5 MT28F800B5 5V Only, Dual Supply (Smart 5) 0.18µ ...

Page 2

... A1 24 Order Number and Part Marking MT28F800B5WG-8 B MT28F800B5WP-8 B MT28F800B5WG-8 T MT28F800B5WP-8 T MT28F800B5WG-8 BET MT28F800B5WP-8 BET MT28F800B5WG-8 TET MT28F800B5WP-8 TET MT28F008B5VG-8 B MT28F008B5VG-8 T MT28F008B5VG-8 BET MT28F008B5VG-8 TET Notes: 1. Contact factory for availability. 09005aef8075d1ec MT28F800B5_4.fm - Rev. 4, Pub. 2/2004 SMART 5 BOOT BLOCK FLASH MEMORY Pin Assignment (Top View) ...

Page 3

BYTE# I/O Control Logic Addr. A0-A18/(A19) Buffer/ Latch A9 Power (Current) Control 1 WP# CE# Command OE# Execution WE# Logic RP Notes: 1. Does not apply to MT28F800B5SG. 2. Does not apply to MT28F008B5. Functional ...

Page 4

... VPP = “Don’t Care” during all other operations. V Supply Power Supply: +5V ±10 Supply Ground – No Connect: These pins may be driven or left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 8Mb DESCRIPTION = PP during a WRITE or ERASE. Does IH ; RP# must be HH ©2002 Micron Technology Inc. ...

Page 5

... High 9Ch 88h 9Ch High 9Dh 88h 9Dh High-Z ID Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DQ15/ A-1 High-Z High-Z A-1 High Data- Data-In Data-In X A – X – X – X ©2002 Micron Technology Inc. ...

Page 6

... Micron Technology, Inc., reserves the right to change products or specifications without notice PPH PPH PPH PPH PPH PPH ©2002 Micron Technology Inc. 8Mb DQ0–DQ7 High-Z High-Z Data-Out High-Z 20h D0h 10h/40h Data-In FFh 20h D0h D0h 10h/40h Data-In Data-In FFh 89h 98h 99h ...

Page 7

... ISM. These bits indi- cate whether the ISM is busy with an ERASE or WRITE voltage task and when an erase has been suspended. Addi- PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 8Mb voltage be present on the when HH ©2002 Micron Technology Inc. ...

Page 8

... A0000h 4FFFFh 9FFFFh 128KB Main Block 40000h 80000h 3FFFFh 7FFFFh 128KB Main Block 30000h 60000h 2FFFFh 5FFFFh 128KB Main Block 20000h 40000h 1FFFFh 3FFFFh 128KB Main Block 10000h 20000h 0FFFFh 1FFFFh 128KB Main Block 00000h 00000h ©2002 Micron Technology Inc. 8Mb ...

Page 9

... ID register can be read while the device is in any mode. When A9 is returned to V device will return to the previous mode. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 8Mb ) to the A9 pin. Using this the IL IH ©2002 Micron Technology Inc. ...

Page 10

... When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed Writing to the boot block also PPH or WP# be HIGH. HH Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb PP ©2002 Micron Technology Inc. ...

Page 11

... WRITE or ERASE CONFIRM is given. V cleared by CLEAR STATUS REGISTER RESET. Reserved for future use. Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 8Mb status bits must be PP sta- PP voltage. It does not monitor V PP voltage. The V pin must be PP ©2002 Micron Technology Inc. ...

Page 12

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 8Mb . Writing to the boot block also PPH or the WP brought PP until the write is completed PPH SECOND CYCLE ADDRESS DATA READ IA ID READ X SRD WRITE BA D0h WRITE X D0h WRITE WA WD WRITE WA WD ©2002 Micron Technology Inc NOTES ...

Page 13

... ERASE error ERASE error, V voltage not valid at time of ERASE CONFIRM PP Command sequencing error or WRITE/ERASE error Command sequencing error, V voltage error, with WRITE and ERASE errors Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb PP ©2002 Micron Technology Inc. ...

Page 14

... Power-Up/Reset Timing Diagram RP (5V) Address Data NOTE goes HIGH. Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 8Mb is at valid func- CC -GND Figure 2: Note VALID VALID t RWH UNDEFINED must be within the valid operating range before RP# CC ©2002 Micron Technology Inc. ...

Page 15

... MT28F800B5_4.fm - Rev. 4, Pub. 2/2004 SMART 5 BOOT BLOCK FLASH MEMORY 1 Start (WRITE completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 COMPLETE WRITE STATUS-CHECK SEQUENCE SR3 = 0? V Error PP YES NO SR4 = 0? BYTE/WORD WRITE Error YES WRITE Successful ©2002 Micron Technology Inc. 8Mb 5 ...

Page 16

... Sequence ERASE Resumed Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful ©2002 Micron Technology Inc. 8Mb 6 6 ...

Page 17

... WRITE B0h (ERASE SUSPEND STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFh (READ ARRAY) Done NO Reading? YES WRITE D0h (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb ©2002 Micron Technology Inc. ...

Page 18

... Micron Technology, Inc., reserves the right to change products or specifications without notice for <20ns. CC ≤ +85ºC) A MIN MAX UNITS 4 -0.5 0 12.6 V ≤ +85ºC) A MIN MAX UNITS 2.4 – V – 0. 0.4 – µA – 500 µA – 500 µA -10 10 µA ©2002 Micron Technology Inc. 8Mb NOTES NOTES 1 1 ...

Page 19

... Extended Temperature (-40ºC ≤ RP RP 0.2V) CC SUPPLY SUPPLY Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 SYMBOL MAX ≤ +85ºC) A SYMBOL MAX UNITS 130 µ µ ±15 µ µ ©2002 Micron Technology Inc. 8Mb UNITS pF pF NOTES ...

Page 20

... Extended Temperature (-40ºC ≤ SYMBOL ACE t AOE RWH ACE - AOE after CE# falls before 20 ≤ +85ºC -8/-8 ET MIN MAX UNITS 1,000 ACE is affected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb = +5V ±10% CC NOTES 1 1 ©2002 Micron Technology Inc. ...

Page 21

... L WORD-WIDE READ CYCLE VALID ADDRESS ACE t AOE MAX UNITS SYMBOL t ns RWH Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 8Mb VALID DATA DON’T CARE UNDEFINED -8/-8 ET MIN MAX 1,000 20 0 ©2002 Micron Technology Inc. UNITS ...

Page 22

... ACE t AOE HIGH-Z t RWH ≤ +70ºC) A ≤ +85ºC) A MAX UNITS SYMBOL t ns RWH VALID DATA -8/-8 ET MIN MAX 1,000 20 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb DON’T CARE UNDEFINED UNITS ©2002 Micron Technology Inc. ...

Page 23

... Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 ≤ +85ºC +5V ±10 MIN MAX UNITS – 1.5 V 4 – V ≤ +85ºC +5V ±10 SYMBOL MAX UNITS 200 µ plus read current if a READ 12 ©2002 Micron Technology Inc. 8Mb NOTES 2 3 NOTES ...

Page 24

... MAX UNITS CPH CP WS WH) 200 1,000 100 4.5 100 ms 100 ms 500 ms 200 0 0 100 TYP MAX UNITS 0 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb = +5V ±10% NOTES µ NOTES ©2002 Micron Technology Inc. ...

Page 25

... ET MIN MAX 1,000 100 4.5 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in DON’T CARE UNITS ns ns µ ©2002 Micron Technology Inc. ...

Page 26

... ET MIN MAX 1,000 100 4.5 100 100 500 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8Mb CMD in DON’T CARE UNITS ns ns µ ©2002 Micron Technology Inc. ...

Page 27

... SEE DETAIL A Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) DETAIL A .0315 (0.80) 8Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2002 Micron Technology Inc. ...

Page 28

... MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 .010 (0.25) .475 (12.07) .469 (11.91) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A ©2002 Micron Technology Inc. 8Mb GAGE PLANE .024 (0.60) .016 (0.40) ...

Page 29

... MAX GAGE PLANE .010 (0.25) .0315 (0.80) Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 8Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2002 Micron Technology Inc. ...

Page 30

... Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. 09005aef8075d1ec MT28F800B5_4.fm - Rev. 4, Pub. 2/2004 SMART 5 BOOT BLOCK FLASH MEMORY ® Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 8Mb ©2002 Micron Technology Inc. ...

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