M25P80-VMW6 STMicroelectronics, M25P80-VMW6 Datasheet - Page 31

IC FLASH 8MBIT 40MHZ 8SOIC

M25P80-VMW6

Manufacturer Part Number
M25P80-VMW6
Description
IC FLASH 8MBIT 40MHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P80-VMW6

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3601

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P80-VMW6
Manufacturer:
FREESCALE
Quantity:
13
Part Number:
M25P80-VMW6
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25P80-VMW6G
Manufacturer:
CET
Quantity:
1 200
Part Number:
M25P80-VMW6G
Manufacturer:
ST
0
Part Number:
M25P80-VMW6G
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25P80-VMW6G
0
Part Number:
M25P80-VMW6G SO8
Manufacturer:
ST
0
Part Number:
M25P80-VMW6P
Manufacturer:
AVNET
Quantity:
20 000
Part Number:
M25P80-VMW6T
Manufacturer:
ST
Quantity:
20 000
Part Number:
M25P80-VMW6TG
Manufacturer:
MICRON
Quantity:
12 500
Part Number:
M25P80-VMW6TG
Manufacturer:
Numonyx
Quantity:
24 000
Part Number:
M25P80-VMW6TG
Manufacturer:
MICRON44
Quantity:
7 285
Part Number:
M25P80-VMW6TG
Manufacturer:
ST
0
Part Number:
M25P80-VMW6TG
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P80-VMW6TG
Quantity:
1 363
Part Number:
M25P80-VMW6TG
0
Company:
Part Number:
M25P80-VMW6TG
Quantity:
20 000
Part Number:
M25P80-VMW6TG 25P80VG
Manufacturer:
ST
0
Part Number:
M25P80-VMW6TG/T9HX
Manufacturer:
ST
0
M25P80
6.10
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are
0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected.
Figure 16. Bulk Erase (BE) instruction sequence
S
C
D
0
Figure
1
2
Instruction
16.
3
4
5
6
7
AI03752D
BE
) is initiated. While the
Instructions
31/52

Related parts for M25P80-VMW6