NAND256W3A0AN6E STMicroelectronics, NAND256W3A0AN6E Datasheet - Page 45

IC FLASH 256MBIT 48TSOP

NAND256W3A0AN6E

Manufacturer Part Number
NAND256W3A0AN6E
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND256W3A0AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Speed
-
Other names
497-3613
Ready/Busy Signal Electrical Characteristics
Figures 37,
teristics for the Ready/Busy signal. The value re-
quired for the resistor R
the following equation:
So,
where I
devices tied to the Ready/Busy signal. R
determined by the maximum value of t
Figure 36. Ready/Busy AC Waveform
Figure 38. Resistor Value Versus Waveform Timings For Ready/Busy Signal
Note: T = 25°C.
R P min
ready V DD
400
300
200
100
R P min 1,8V
L
0
R P min 3V
is the sum of the input currents of all the
1
1.7
30
1.7
36
=
t f
----------------------------------------------------------- -
and
V DDmax V OLmax
V OL
V DD = 1.8V, C L = 30pF
38
2
=
0.85
60
1.7
I OL
=
show the electrical charac-
busy
P
---------------------------
8mA
R P (K
---------------------------
3mA
can be calculated using
+
3,2V
1,85V
+
I L
+
3
1.7
0.57
I L
90
I L
t r
r
.
V OH
t f
P
AI07564B
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
max is
4
1.7
0.43
120
2
1
3
4
t r
Figure 37. Ready/Busy Load Circuit
400
300
200
100
0
1
100
3.6
2.4
DEVICE
V SS
V DD
ibusy
V DD = 3.3V, C L = 100pF
2
200
3.6
1.2
R P (K
R P
Open Drain Output
3
RB
300
3.6
0.8
400
ibusy
4
3.6
3
2
1
0.6
4
ai07565B
AI07563B
45/56

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