W25P16VSSIG Winbond Electronics, W25P16VSSIG Datasheet - Page 18

• Manufacturer Part Number: W25P16VSSIG
• Description: IC FLASH 16MBIT 50MHZ 8SOIC
• Manufacturer: Winbond Electronics

Specifications of W25P16VSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 50MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

W25P80 AND W25P16
9.2.7
Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed
by a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge
of the CLK pin. After the address is received, the data byte of the addressed memory location will be
shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is
automatically incremented to the next higher address after each byte of data is shifted out allowing for
a continuous stream of data. This means that the entire memory can be accessed with a single
instruction as long as the clock continues. The instruction is completed by driving /CS high. The Read
Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an Erase,
Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects
on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of f
( see
R
AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
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