ISL88731AHRZ-T Intersil, ISL88731AHRZ-T Datasheet - Page 21

• Manufacturer Part Number: ISL88731AHRZ-T
• Description: IC BATTERY CHRGR SMBUS 28-TQFN
• Manufacturer: Intersil

Specifications of ISL88731AHRZ-T

• Function: Charge Management
• Battery Type: Lithium-Ion (Li-Ion)
• Voltage - Supply: 8 V ~ 26 V
• Operating Temperature: -10°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 28-TQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

C
frequency pole and a zero at F
information is added to the feedback to create a second zero
F
ISL88731A add a pole at F
divider resistors that set the DC output voltage. For a 3-cell
battery, R
30 relate the compensation network’s poles, zeros and gain
to the components in Figure 24. Figure 26 shows an
asymptotic Bode plot of the DC/DC converter’s gain vs
frequency. It is strongly recommended that F
approximately 30% of F
of F
ZERO2
VCOMP
FIGURE 25. FREQUENCY RESPONSE OF THE LC OUTPUT
FIGURE 26. ASYMPTOTIC BODE PLOT OF THE VOLTAGE
-20
-40
-60
LC
60
40
20
0
.
0.1
. The low pass filter R
3
which give the loop very high DC gain, a very low
= 500kΩ and R
FILTER
CONTROL LOOP GAIN
R
= 200m Ω
BATTERY
F
R
= 50m Ω
1
ZERO1
BATTERY
Compensator
Modulator
Loop
FREQUENCY (kHz)
LC
FREQUENCY
and F
4
FILTER
= 100kΩ. Equations 23 through
21
F2
ZERO1
10
ZERO2
, C
F
. R
ZERO2
F2
3
F
. Inductor current
between R
is approximately 70%
and R
LC
100
F
NO BATTERY
4
ZERO1
F
ESR
FILTER
are internal
F
POLE1
S2
is
and
1000
ISL88731A
Compensation Break Frequency Equations
F
F
F
F
F
F
Choose R
from Equation 29.
R
Next choose C
calculated from Equation 30.
C
PCB Layout Considerations
Power and Signal Layers Placement on the PCB
As a general rule, power layers should be close together,
either on the top or bottom of the board, with signal layers on
the opposite side of the board. As an example, layer
arrangement on a 4-layer board is shown below:
Separate the power voltage and current flowing path from
the control and logic level signal path. The controller IC will
stay on the signal layer, which is isolated by the signal
ground to the power signal traces.
Component Placement
The power MOSFET should be close to the IC so that the
gate drive signal, the LGATE, UGATE, PHASE, and BOOT,
traces can be short.
Place the components in such a way that the area under the
IC has less noise traces with high dv/dt and di/dt, such as
gate signals and phase node signals.
1. Top Layer: signal lines, or half board for signal lines and
2. Signal Ground
3. Power Layers: Power Ground
4. Bottom Layer: Power MOSFET, Inductors and other
ZERO1
ZERO2
LC
FILTER
POLE1
ESR
VCOMP
VCOMP
the other half board for power lines
Power traces
=
=
-------------------------------
(
2π L C
------------------------------------------- -
(
=
=
=
=
2π C
=
=
VCOMP
--------------------------------------------------- -
(
---------------------------------------------------------------------- -
(
⎛
⎜
⎝
------------------------------------------ -
(
2π R
1
(
2π C
---------------------------------------------- -
2π R
-------------------------------------------------------------------------- -
(
2π R
⋅
0.7 F
0.3 F
⋅
⋅
⋅
o
⋅
⋅
VCOMP
1
R
o
⋅
⋅
⋅
VCOMP
)
SENSE
VCOMP
R
SENSE
F2
1
equal or lower than the value calculated
LC
LC
ESR
1
⋅
)
)
C
⋅
⋅
1
F2
)
(
(
equal or higher than the value
2π C
1
2π R
⋅
⋅
⋅
C
)
C
R
o
⋅
⋅
o
1COMP
)
⎞
⎟
⎠
o
VCOMP
⋅
⎛
⎜
⎝
⋅
-------------------- -
R
R
4
SENSE
R
)
+
4
R
)
3
⎞
⎟
⎠
)
⋅
⎛
⎝
⋅
gm1
----------- -
⎛
⎝
----------- -
gm1
5
5
⎞
⎠
⎞
⎠
⋅
February 8, 2011
⎛
⎜
⎝
R
-------------------- -
3
(EQ. 23)
(EQ. 24)
(EQ. 25)
(EQ. 26)
(EQ. 27)
(EQ. 28)
R
(EQ. 29)
(EQ. 30)
+
FN6738.2
4
R
4
⎞
⎟
⎠