L6386ED STMicroelectronics, L6386ED Datasheet

IC DRIVER HIGH/LOW SIDE 14-SOIC

L6386ED

Manufacturer Part Number
L6386ED
Description
IC DRIVER HIGH/LOW SIDE 14-SOIC
Manufacturer
STMicroelectronics
Type
High Side/Low Sider
Datasheet

Specifications of L6386ED

Configuration
High and Low Side, Independent
Input Type
Non-Inverting
Delay Time
110ns
Current - Peak
400mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
17V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Product
H-Bridge Drivers
Rise Time
50 ns
Fall Time
30 ns
Maximum Power Dissipation
750 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 45 C
Number Of Drivers
2
For Use With
497-5492 - EVAL BOARD FOR L6384/L6385/L6386
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
High voltage rail up to 600 V
dV/dt immunity ±50 V/nsec in full temperature
range
Driver current capability:
– 400 mA source,
– 650 mA sink
Switching times 50/30 nsec rise/fall with 1 nF
load
CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
Under-voltage lock out on lower and upper
driving section
Integrated bootstrap diode
Outputs in phase with inputs
Figure 1.
Block diagram
BOOTSTRAP DRIVER
V
CC
UV
DETECTION
4
3
HIN
2
SD
1
LIN
SGND
7
July 2009
High-voltage high and low side driver
Description
The L6386E is an high-voltage device,
manufactured with the BCD “off-line” technology.
It has a driver structure that enables to drive
independent referenced channel power MOS or
IGBT. The high-side (floating) section is enabled
to work with voltage rail up to 600 V. The logic
inputs are CMOS/TTL compatible for ease of
interfacing with controlling devices.
UV
DETECTION
R
R
S
LEVEL
SHIFTER
LOGIC
LVG
DRIVER
-
VREF
+
Doc ID 13989 Rev 2
L6386E
DIP-14
SO-14
Vboot
14
C
BOOT
H.V.
HVG
DRIVER
HVG
13
OUT
12
TO LOAD
V
CC
LVG
9
PGND
8
DIAG
5
6
CIN
D97IN520D
www.st.com
1/18
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L6386ED Summary of contents

Page 1

Features ■ High voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 400 mA source, – 650 mA sink ■ Switching times 50/30 nsec rise/fall with 1 nF load ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

L6386E 1 Electrical data 1.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol V Output voltage out V Supply voltage cc V Floating supply voltage boot V High side gate output voltage hvg V Low side gate output voltage ...

Page 4

Pin connection 2 Pin connection Figure 2. Pin connection (Top view) Table 4. Pin description N° Pin 1 LIN ( HIN DIAG 6 CIN 7 SGND 8 PGND (1) 9 LVG 10, 11 ...

Page 5

L6386E 3 Electrical characteristics 3.1 AC operation ° ‘s Table 5. AC operation Symbol Pin t on 1,3 vs 9,13 t off 9, ...

Page 6

Electrical characteristics Table 6. DC operation Symbol Pin Driving buffers section 9, High/low side source short circuit current 9, High/low side sink short circuit current Logic inputs Low level logic threshold V il voltage ...

Page 7

L6386E 3.3 Timing diagram Figure 3. Input/output timing diagram HIN LIN SD HOUT LOUT V REF V CIN DIAG Note: SD active condition is latched until next negative IN edge. Doc ID 13989 Rev 2 Electrical characteristics D97IN522A 7/18 ...

Page 8

Bootstrap driver 4 Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode integrated structure replaces the external diode realized by a high ...

Page 9

L6386E For example: using a power MOS with a total gate charge the drop on the bootstrap DMOS is about the T V has to be taken into account when the voltage drop on ...

Page 10

Typical characteristic 5 Typical characteristic Figure 5. Typical rise and fall times vs load capacitance time (nsec) 250 200 150 100 For both high and low side buffers @25˚C Tamb Figure 7. Turn on time vs ...

Page 11

L6386E Figure 11. Shutdown time vs temperature 250 200 150 Typ. 100 50 0 -45 -25 Figure 13 temperature Typ -45 -25 Figure 15 temperature Typ. ...

Page 12

Typical characteristic Figure 17 temperature 3 2.5 Typ. 2 1.5 1 -45 -25 12/18 UV hysteresis 100 125 Tj (°C) Doc ID 13989 Rev 2 L6386E ...

Page 13

L6386E 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ...

Page 14

Package mechanical data Figure 18. DIP14 mechanical data and package dimensions DIM. MIN. TYP. a1 0. 15. 1.27 14/18 mm inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 ...

Page 15

L6386E Figure 19. SO14 mechanical data and package dimensions DIM. MIN. TYP. A 1.35 A1 0.10 A2 1.10 B 0.33 C 0.19 (1) 8. 3.80 e 1.27 H 5.8 h 0.25 L 0.40 k ddd (1) “D” dimension ...

Page 16

... Ordering information 7 Ordering information Table 7. Ordering information Part number L6386E L6386ED L6386ED013TR 16/18 Package DIP14 SO14 Doc ID 13989 Rev 2 L6386E Packaging Tube Tube Tape and reel ...

Page 17

L6386E 8 Revision history Table 8. Document revision history Date 11-Oct-2007 22-Jul-2009 Revision 1 First release 2 Modified V on Table 6 bth2 Doc ID 13989 Rev 2 Revision history Changes 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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