IRS26302DJPBF International Rectifier, IRS26302DJPBF Datasheet - Page 29

• Manufacturer Part Number: IRS26302DJPBF
• Description: IC BRIDGE +1 GATE DVR 3PH 44PLCC
• Manufacturer: International Rectifier

Specifications of IRS26302DJPBF

• Configuration: 3 Phase Bridge
• Input Type: Non-Inverting
• Delay Time: 320ns
• Current - Peak: 200mA
• Number Of Configurations: 1
• Number Of Outputs: 3
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 44-PLCC (32 Leads)
• Number Of Drivers: 6
• Driver Configuration: Non-Inverting
• Driver Type: High and Low Side
• Input Logic Level: CMOS/TTL
• Rise Time: 190ns
• Fall Time: 75ns
• Propagation Delay Time: 710ns
• Peak Output Current: 350mA
• Power Dissipation: 4.6W
• Operating Supply Voltage (min): 10V
• Turn Off Delay Time: 50ns
• Turn On Delay Time (max): 50ns
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 32
• Package Type: PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRS26302DJ
Integrated Bootstrap Functionality
The IRS26302DJ features integrated high-voltage bootstrap MOSFETs that eliminate the need of the external
bootstrap diodes and resistors in many applications.
There is one bootstrap MOSFET for each high-side output channel and it is connected between the V
supply and
CC
its respective floating supply (i.e., V
, V
, V
); see Figure 24 for an illustration of this internal connection.
B1
B2
B3
The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and it has a limited source
current due to R
. The V
voltage will be charged each cycle depending on the on-time of LO and the value of the
BS
BS
C
capacitor, the drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side free-
BS
wheeling diode drop.
The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap
MOSFET is ON when LO is high, it is OFF when LO is low), unless the V
voltage is higher than approximately 110%
B
of V
. In that case, the bootstrap MOSFET is designed to remain off until V
returns below that threshold; this
CC
B
concept is illustrated in Figure 25.
Figure 24: Internal bootstrap MOSFET connection
Figure 25: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with the
external bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap as
a replacement of the external bootstrap network may have some limitations. An example of this limitation may arise
when this functionality is used in non-complementary PWM schemes (typically 6-step modulations) and at very high
PWM duty cycle. In these cases, superior performances can be achieved by using an external bootstrap diode in
parallel with the internal bootstrap network.
Bootstrap Power Supply Design
For information related to the design of the bootstrap power supply while using the integrated bootstrap functionality
of the IRS26302DJ, please refer to Application Note 1123 (AN-1123) entitled “Bootstrap Network Analysis: Focusing
on the Integrated Bootstrap Functionality.” This application note is available at www.irf.com.
For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode)
please refer to Design Tip 04-4 (DT04-4) entitled “Using Monolithic High Voltage Gate Drivers.” This design tip is
available at www.irf.com.
www.irf.com
© 2009 International Rectifier
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