VND830-E STMicroelectronics, VND830-E Datasheet
VND830-E
Specifications of VND830-E
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VND830-E Summary of contents
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... REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC ■ EUROPEAN DIRECTIVE DESCRIPTION The VND830 monolithic device made by using STMicroelectronics Technology, intended for driving any kind of load with one side connected to ground. Active V voltage clamp protects the devices against low energy ...
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... VND830-E Figure 2. Block Diagram V CC CLAMP GND INPUT1 STATUS1 LOGIC OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 Table 3. Absolute Maximum Ratings Symbol V DC Supply Voltage Reverse DC Supply Voltage Reverse Ground Pin Current GND I DC Output Current OUT - I Reverse DC Output Current OUT I DC Input Current ...
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... I IN1 V CC INPUT 1 I STAT1 OUTPUT 1 STATUS 1 I IN2 INPUT 2 I STAT2 OUTPUT 2 STATUS 2 GND V STAT2 I GND Parameter (at least 35µm thick) connected to all (at least 35µm thick) connected to all V VND830-E Input (*) OUT1 V OUT1 I OUT2 V OUT2 Value (MAX) 15 (MAX) 65 (*) 48 (**) pins. Horizontal CC pins. Horizontal ...
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... VND830-E ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C< T <150°C, unless otherwise specified (Per each channel) Table 5. Power Output Symbol Parameter V (**) Operating Supply Voltage CC V (**) Undervoltage Shut-down USD V (**) Overvoltage Shut-down State Resistance ON I (**) Supply Current S I Off State Output Current L(off1) I Off State Output Current ...
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... OUT R =6.5Ω from V =11. OUT V =1.3V OUT Test Conditions V = =0A OUT V =0V IN Test Conditions = 1.25V 3.25V 1mA -1mA IN VND830-E Min Typ Max Unit 0.5 V µA 10 100 -0.7 V Min Typ Max Unit µs 30 µs 30 See relative V/µs diagram See relative V/µ ...
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... VND830-E Table 12. Truth Table CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > Output Current < Figure 5. Switching time Waveforms V OUTn 80% dV /dt OUT (on) V INn t d(on) 6/20 INPUT OUTPUT 10% t d(off) SENSE < TSD (T > TSD 90% dV /dt OUT (off ...
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... TEST LEVELS II III -50 V -75 V +50 V +75 V -50 V -100 V + +46.5 V +66.5 V TEST LEVELS RESULTS II III CONTENTS VND830-E IV Delays and Impedance Ω -100 V 0 Ω +100 V 0.1 µs 50 Ω -150 V 0.1 µs 50 Ω +100 V 100 ms, 0.01 Ω 400 ms, 2 Ω +86 7/20 ...
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... VND830-E Figure 6. Waveforms INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT VOLTAGE n STATUS n INPUT n OUTPUT VOLTAGE n STATUS n INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT CURRENT STATUS n 8/20 NORMAL OPERATION UNDERVOLTAGE V USDhyst V USD undefined OVERVOLTAGE V < OPEN LOAD with external pull-up V > ...
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... Transient Suppressor) if the ld will GND load dump peak voltage exceeds V The same applies if the device will be subject to transients on the V shown in the ISO T/R 7637/1 table. . GND VND830 OUTPUT1 OUTPUT2 D GND ) in the ground line. GND =1kΩ) should be inserted in parallel to GND max DC rating ...
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... VND830-E µC I/Os PROTECTION ground protection network is used and negative transient are present on the V line, the control pins will CC be pulled negative. ST suggests to insert a resistor (R in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µ ...
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... Figure 14. Status Clamp Voltage Vscl (V) 8 7.8 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 125 150 175 -50 -25 VND830-E Vin=3.25V 100 125 150 175 Tc (°C) Vstat= 100 125 150 175 Tc (°C) Istat=1mA 100 125 ...
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... VND830-E Figure 15. Overvoltage Shutdown Vov ( -50 - 100 Tc (°C) Figure 16. Turn-on Voltage Slope dVout/dt(on) (V/ms) 800 700 Vcc=13V Rl=6.5Ohm 600 500 400 300 200 100 0 -50 - 100 Tc (ºC) Figure 17. On State Resistance Vs T Ron (mOhm) 160 140 Iout=2A Vcc=8V; 13V & 36V 120 ...
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... Figure 25. Openload Off State Detection Vol (V) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 125 150 175 125 150 175 VND830-E - 100 125 150 Tc (°C) Threshold Vin=0V - 100 125 150 Tc (°C) 175 175 13/20 ...
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... VND830-E Figure 26. SO-16L Maximum turn off current versus load inductance I LMAX (A) 100 Single Pulse at T =150ºC Jstart B= Repetitive pulse at T =100ºC Jstart C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 14/ L(mH) Values are generated with R In case of repetitive pulses, T ...
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... SO-16L Thermal Data Figure 27. SO-16L PC Board Layout condition of R and thickness=35µm, Copper areas: 0.5cm Figure 28 PCB copper area in open box free air condition thj-amb RTH j-amb (°C/ measurements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm 6cm ). PCB Cu heatsink area (cm^2) VND830 15/20 ...
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... VND830-E Figure 29. SO-16L Thermal Impedance Junction Ambient Single Pulse ZT H (°C/W) 1000 100 10 1 0.1 0.01 0.0001 0.001 0.01 Figure 30. Thermal fitting model of a double channel HSD in SO-16L Tj_1 Pd1 C1 C2 Tj_2 R1 R2 Pd2 T_amb 16/20 0 ime (s) Pulse calculation formula THδ ...
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... PACKAGE MECHANICAL Table 15. SO-16L Mechanical Data Symbol Figure 31. SO-16L Package Dimensions millimeters Min Typ 0.1 0.35 0.23 0.5 45° (typ.) 10.1 10.0 1.27 8.89 7.4 0.5 8° (max.) VND830-E Max 2.65 0.2 2.45 0.49 0.32 10.5 10.65 7.6 1.27 0.75 17/20 ...
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... VND830-E Figure 32. SO-16L Tube Shipment (No Suffix Figure 33. Tape And Reel Shipment (Suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width W Tape Hole Spacing P0 (± 0.1) Component Spacing P Hole Diameter D (± 0.1/-0) Hole Diameter ...
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... REVISION HISTORY Date Revision Nov. 2004 DS(on) Feb. 2005 3 - Iol curve changed. Description of Changes value correction: 60mΩ instead of 35mΩ. VND830-E 19/20 ...
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... VND830-E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...