VND830-E STMicroelectronics, VND830-E Datasheet - Page 9

• Manufacturer Part Number: VND830-E
• Description: IC DRIVER HIGH SIDE 2CH 16-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND830-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 60 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 9A
• Output Resistance: 0.06ohm
• Input Delay: 30µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

Figure 7. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the of
the device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same R
D
GND
1) R
2) R
= (-V
resistor.
GND
GND
CC
GND
+5V
PROTECTION
µC
)
≤ 600mV / I
≥ (−V
2
/R
is the DC reverse ground pin current and can
GND
CC
S(on)max
) / (-I
R
R
R
R
prot
prot
prot
prot
S(on)max
GND
GND
* R
+5V
)
(when V
NETWORK
GND
.
+5V
) in the input thresholds
S(on)max
CC
GND
<0: during reverse
STATUS2
INPUT2
STATUS1
INPUT1
.
GND
becomes the
AGAINST
only). This
GND
will
V
GND
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggest to utilize Solution 2 (see
below).
Solution 2: A diode (D
A resistor (R
D
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
The same applies if the device will be subject to
transients on the V
shown in the ISO T/R 7637/1 table.
GND
ld
R
GND
GND
is necessary (Voltage Transient Suppressor) if the
if the device will be driving an inductive load.
V
CC
GND
D
GND
=1kΩ) should be inserted in parallel to
CC
OUTPUT2
GND
line that are greater than the ones
OUTPUT1
) in the ground line.
CC
max DC rating.
VND830-E
D
ld
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