VND830E-E STMicroelectronics, VND830E-E Datasheet - Page 16

• Manufacturer Part Number: VND830E-E
• Description: IC DVR HIGH SIDE 2CH 16SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND830E-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 60 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VND830E-E
3
3.1
3.1.1
Application information
Figure 25. Application schematic
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following shows how to dimension the R
1.
2.
where -I
maximum rating section of the device’s datasheet.
Power dissipation in R
This resistor can be shared amongst several different HSD. Please note that the value of this
resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
R
R
P
D
+5V
GND
GND
μC
= (-V
GND
≤ 600 mV / (I
≥ (-V
is the DC reverse ground pin current and can be found in the absolute
CC
R
R
R
R
)
CC
2
prot
prot
prot
prot
/ R
) / (-I
+5V
GND
GND
GND
+5V
S(on)max
(when V
)
STATUS1
INPUT1
STATUS2
INPUT2
Doc ID 17461 Rev 1
)
CC
< 0 during reverse battery situations) is:
V
GND
GND
resistor:
R
GND
GND
S(on)max
GND
V
CC
D
only)
GND
becomes the sum of the
OUTPUT2
OUTPUT1
Application information
D
ld
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