L6227Q STMicroelectronics, L6227Q Datasheet - Page 10

IC DRIVER FULL BRDG PWM 32VFQFPN

L6227Q

Manufacturer Part Number
L6227Q
Description
IC DRIVER FULL BRDG PWM 32VFQFPN
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet

Specifications of L6227Q

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
730 mOhm
Current - Output / Channel
1.4A
Current - Peak Output
2.8A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
32-VFQFN, 32-VFQFPN
Product
H-Bridge Drivers
Rise Time
250 ns
Fall Time
250 ns
Supply Voltage (min)
8 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Bridge Type
Full Bridge
Maximum Turn-on Delay Time
1900 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
For Use With
497-6817 - EVAL BOARD FOR L6227Q
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
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Circuit description
4
4.1
10/27
Circuit description
Power stages and charge pump
The L6227Q integrates two independent power MOS Full Bridges. Each power MOS has an
R
conduction protection is achieved using a dead time (td = 1 µs typical) between the switch
off and switch on of two power MOS in one leg of a bridge.
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped (VBOOT) supply is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in
10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown
in
Table 6.
Figure 5.
C
C
D1
D2
DS(on)
BOOT
P
Table
= 0.73 Ω (typical value @ 25 °C), with intrinsic fast freewheeling diode. Cross
6.
Figure
Charge pump external components values
Charge pump circuit
Component
5. The oscillator output (VCP) is a square wave at 600 kHz (typical) with
VCP
D1
C
P
D2
VBOO T
C
BOO T
220 nF
10 nF
1N4148
1N4148
VS
A
VS
B
D01IN1328
V
Value
S
L6227Q

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