MCZ33999EK Freescale Semiconductor, MCZ33999EK Datasheet - Page 14

• Manufacturer Part Number: MCZ33999EK
• Description: IC SW 16OUTPT PWM & SPI 54-SOIC
• Manufacturer: Freescale Semiconductor
• Type: Low Sider

Specifications of MCZ33999EK

• Number Of Outputs: 16
• Rds (on): 550 mOhm
• Internal Switch(s): Yes
• Current Limit: 1.2A
• Voltage - Input: 5 ~ 27 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 54-SOIC (7.5mm Width) Exposed Pad, 54-eSOIC, 54-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

filter of 100 µs to 450 µs is incorporated. The duration for
which a false fault may be reported is a function of the load
impedance, R
supply voltage, V
in fault delay timer. The timer must time out before the fault
comparator is enabled to detect a faulted threshold. Once the
condition causing the Open Load Fault is removed, the
device resumes normal operation. The Open Load Fault,
however, will be latched in the output SO Response register
for the MCU to read.
SHORTED LOAD FAULT
output being shorted directly to supply, or by an output
experiencing a current greater than the current limit.
short conditions afford system protection:
in the SO Response register) to logic [1].
UNDERVOLTAGE SHUTDOWN
shutdown of all outputs and reset of all control registers. The
undervoltage threshold is between 2.0 V and 3.0 V.
output shutdown and reset. The undervoltage threshold is
between 3.2 V and 3.5 V. When V
3.5 V, the output may operate per the command word and the
status is reported on SO pin, though this is not guaranteed.
OUTPUT VOLTAGE CLAMP
clamp to provide fast turn-OFF and transient protection of
14
33999
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
1. The device’s output current is monitored in an analog
2. With the output in current limit, the drain-to-source
3. The output thermal limit of the device is sensed and,
A shorted load (overcurrent) fault can be caused by any
Three safety circuits progressively in operation during load
All three protection schemes set the Fault Status bit (bit 23
An undervoltage SO
An undervoltage condition at the VPWR pin results in an
Each output of the 33999 incorporates an internal voltage
fashion using a SENSEFET approach and is current
limited.
voltage increases. By setting the SFPD bit to 0, the
output shuts down on V
when attained, causes only the specific faulted output
to shut down. The device remains OFF until cooled.
The device then operates as programmed by the
shutdown / retry bit. The cycle continues until the fault is
removed or the command bit instructs the output OFF.
DS(ON)
PWR
, C
. The rising edge of
OUT
PWR
of the MOSFET, as well as the
condition results in the global
DS
> 2.7 V typical after 450 µs.
PWR
is between 5.0 V and
CS
triggers the built-
each output. Each clamp independently limits the drain-to-
source voltage to 50 V. The total energy clamped (E
calculated by multiplying the current area under the current
curve (I
non-repetitive method at 0.3 A, indicates the maximum
energy to be 50 mJ at 150°C junction temperature per output.
REVERSE BATTERY PROTECTION
protection on the VPWR pin.
substrate diode. During reverse battery condition, current will
flow through the load via the substrate diode. Under this
circumstance relays may energize and lamps will turn on. If
load reverse battery protection is desired, a diode must be
placed in series with the load.
OVERTEMPERATURE FAULT
incorporated for each individual output. The shutdown
following an overtemperature condition depends on the
control bit set in the Retry / Shutdown Control register. Each
independent output shuts down at 155°C to 180°C. When an
output shuts down due to an Overtemperature Fault, no other
outputs are affected. The MCU recognizes the fault by a
logic [1] in the Fault Status bit (bit 23 in the SO Response
register). After the 33999 has cooled below the switch point
temperature and 10°C hysteresis, the output functions as
defined by the retry / shutdown bit 17 in the Global Shutdown /
Retry Control register.
Drain-to-Source ON
Voltage (V
Drain-to-Source ON
Voltage (V
Characterization of the output clamps, using a single pulse
The 33999 device requires external reverse battery
All outputs consist of a power MOSFET with an integral
Overtemperature Detect circuits are specifically
Drain-to-Source Clamp
Voltage (V
Drain Current
(I
Drain-to-Source C lamp
Voltage (V
Drain Current
(I
D
A
D
) times the clamp voltage (V
= 0.3 A)
DS (O N)
= 0.3 A)
DS(ON)
Figure 12. Output Voltage Clamping
CL
GND
)
GND
CL
= 50 V)
)
= 45 V)
50 V)
Analog Integrated Circuit Device Data
Curren t
Area (I
A
)
Freescale Semiconductor
CL
Drain Voltage
) (see
Drain Voltage
Clamp Energy
(E
Clamp Energy
(E
J
= I
J
= I
A
Figure
x V
A
x V
CL
J
CL
)
Time
) can be
12).
Time
)