HIP6004ECB Intersil, HIP6004ECB Datasheet - Page 11

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HIP6004ECB

Manufacturer Part Number
HIP6004ECB
Description
IC CTRLR PWM VOLTAGE MON 20-SOIC
Manufacturer
Intersil
Datasheet

Specifications of HIP6004ECB

Pwm Type
Voltage Mode
Number Of Outputs
1
Frequency - Max
1MHz
Duty Cycle
100%
Voltage - Supply
5 V ~ 12 V
Buck
Yes
Boost
No
Flyback
No
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
No
Operating Temperature
0°C ~ 70°C
Package / Case
20-SOIC (7.5mm Width)
Frequency-max
1MHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Schottky Selection
Rectifier D
during the dead time between turning off the lower MOSFET
and turning on the upper MOSFET. The diode must be a
Schottky type to prevent the lossy parasitic MOSFET body
diode from conducting. It is acceptable to omit the diode and let
the body diode of the lower MOSFET clamp the negative
inductor swing, but efficiency will drop one or two percent as a
result. The diode’s rated reverse breakdown voltage must be
greater than the maximum input voltage.
Component Selection Notes:
C
C
L
L
2
1
OUT
IN
- Core: micrometals T68-52A; winding: 7 turns of 16AWG.
- Core: micrometals T50-52; winding: 5 turns of 16AWG.
- Each 330µF 25W VDC, Rubycon ZA series or equivalent.
- Each 1000µF 6.3W VDC, Rubycon ZA series or equivalent.
V
IN
2
=
is a clamp that catches the negative inductor swing
+12V
OR
+5V
0.1µF
F 1
11
VID25mV
L1 - 1µH
VID0
VID1
VID2
VID3
VSEN
3x1000µF
FB
RT
SS
0.033µF
3.32K
0.1µF
FIGURE 11. MICROPROCESSOR DC-DC CONVERTER
10nF
C
10
3
1
20
4
5
6
7
8
IN
D/A
470pF
27
OSC
+
-
56K
HIP6004E
PROTECTION
+12V
MONITOR
18
VCC
COMP
9
AND
-
+
HIP6004E
2N6394
OVP
19
11
2K
GND
D
D
Q
Q
1
2
1
2
15
HIP6004E DC-DC Converter Application
Circuit
Figure 11 shows an application circuit of a DC-DC Converter
for a microprocessor. Detailed information on the circuit,
including a complete bill-of-materials and circuit board
description, can be found in AN9916. This application note
also contains the application information for ISL6525, an
controller IC designed to meet the VTT voltage and power-
up sequencing specification given in the Intel VRM8.5.
12
14
13
17
16
- Intersil MOSFET; HUF76137.
- Intersil MOSFET; HUF76139.
D1
- 1N4148 or equivalent.
- 3A, 40V Schottky, Motorola MBR340 or equivalent.
2
OCSET
PGOOD
BOOT
UGATE
PHASE
LGATE
PGND
1µF
1000pF
1.8K
Q2
Q1
0.1µF
D
2
5x1000µF
2.4µH
L2
C
OUT
+V
OUT

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