MT9VDDF6472G-40BD3 Micron Technology Inc, MT9VDDF6472G-40BD3 Datasheet - Page 13

• Manufacturer Part Number: MT9VDDF6472G-40BD3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472G-40BD3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1132

Absolute Maximum Ratings
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed under “Absolute
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
REF
DD
DD
V
IN
SS
SS
SS
Q Supply
= 0.373V, maximum V
Supply
= V
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
DD
DD
V
Q - 0.373V, minimum V
, V
OUT
REF
pin 0V
V
DD
Q)
REF
V
IN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#, S#,
CKE
CK, CK#
DM
DQ, DQS
SYMBOL
V
, minimum V
V
V
T
T
REF
IH
IL
A
A
(
(
AC
(
AC
AC
TT
+70°C
+70°C; V
)
)
256MB, 512MB (x72, ECC, SR) PC3200
)
)
13
TT
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
DD
)
V
0.49
SYMBOL
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
V
REF
V
V
IH
V
IL
V
V
I
Relative to V
T
I
I
MIN
DDQ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OH
REF
(DC)
OZ
OL
DD
(DC)
DD
I
X
184-PIN DDR SDRAM RDIMM
TT
+ 0.310
A
I
–
V
(commercial - ambient) . . . . . . . .. 0°C to +70°C
Q = +2.6V ±0.1V
DD
Q
V
0.49 x V
V
REF
REF
-16.8
MIN
16.8
-0.3
2.5
2.5
-10
-5
-2
-5
0.51
+ 0.15
V
- 0.04 V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51 x V
X
- 0.310
–
V
DD
V
V
REF
REF
DD
Q
MAX
2.7
2.7
10
©2004 Micron Technology, Inc. All rights reserved.
+ 0.04
5
2
5
–
–
- 0.15
+ 0.3
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39,
32, 36, 49
NOTES
6
33, 34
Q +0.5V
6, 39
7, 39
49
25
25
47
47