MT9VDDF6472G-40BD3 Micron Technology Inc, MT9VDDF6472G-40BD3 Datasheet - Page 17

• Manufacturer Part Number: MT9VDDF6472G-40BD3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472G-40BD3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1132

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 8, 10, 12; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
AC CHARACTERISTICS
PARAMETER
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
256MB, 512MB (x72, ECC, SR) PC3200
T
A
17
+70°C; V
SYMBOL
t
t
WPRES
t
t
t
DD
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
t
WPRE
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
184-PIN DDR SDRAM RDIMM
RRD
REFI
VTD
t
WR
na
RP
= V
DD
Q = +2.6V ±0.1V
MIN
0.90
0.40
0.25
0.40
200
15
10
15
70
t
0
2
0
QH -
-40B
t
DQSQ
MAX
70.30
1.10
0.60
7.81
0.6
©2004 Micron Technology, Inc. All rights reserved.
UNITS
t
t
t
t
t
t
t
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
CK
NOTES
18, 19
38
38
17
22
21
21