MT16HTF12864AY-53EB1 Micron Technology Inc, MT16HTF12864AY-53EB1 Datasheet - Page 21

• Manufacturer Part Number: MT16HTF12864AY-53EB1
• Description: MODULE DDR2 1GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53EB1

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.216A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH between valid commands; Address bus inputs are stable during dese-
lects; Data bus inputs are switching
CK (I
DD
OUT
),
t
RC =
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
Notes:
),
Specifications and Conditions – 4GB (Continued)
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
RRD (I
in I
DD
DD2P
), AL =
DD
),
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
t
RCD =
t
RCD (I
t
RCD (I
DD
) - 1 ×
DD
); CKE is HIGH, S# is
21
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
2776
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
-53E
2416
Units
mA