MT16LSDT3264AG-13EG3 Micron Technology Inc, MT16LSDT3264AG-13EG3 Datasheet - Page 13

• Manufacturer Part Number: MT16LSDT3264AG-13EG3
• Description: MODULE SDRAM 256MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT3264AG-13EG3

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Voltage on V
Voltage on Inputs, NC or I/O Pins
Table 10: DC Electrical Characteristics and Operating Conditions – 128MB
Notes: 1, 5, 6; notes appear on page 18; V
Table 11: DC Electrical Characteristics and Operating Conditions – 256MB
Notes: 1, 5, 6; notes appear on page 18; V
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Relative to V
Relative to V
Stresses greater than those listed may cause perma-
DD
SS
SS
, V
. . . . . . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
OUT
OUT
. . . . . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
DD
≤ V
≤ V
Q Supply
OUT
OUT
DD
OUT
DD
OUT
DD
DD
= 4mA)
= 4mA)
Q
Q
= -4mA)
= -4mA)
DD
DD
, V
, V
Command and
Address Inputs, CKE
CK, S#
DQMB
DQ
Command and
Address Inputs, CKE
CK, S#
DQMB
DQ
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
13
128MB (x64, SR), 256MB (x64, DR)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Operating Temperature
Storage Temperature (plastic) . . . . . . . . -55°C to +150°C
V
V
SYMBOL
SYMBOL
DD
DD
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OPR
V
V
V
V
V
V
, V
I
, V
I
V
V
OZ
OZ
OH
OH
I
OL
I
OL
IH
IH
IL
I
IL
I
DD
DD
(Commercial - ambient) . . . . . .0°C to +65°C
Q
Q
168-PIN SDRAM UDIMM
MIN
MIN
-0.3
-0.3
-40
-20
-80
-20
-10
-10
2.4
2.4
-5
-5
3
2
3
2
–
–
V
V
©2003, 2004 Micron Technology, Inc. All rights reserved.
DD
DD
MAX
MAX
3.6
0.8
0.4
3.6
0.8
0.4
40
20
80
20
10
10
5
5
–
–
+ 0.3
+ 0.3
UNITS
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
NOTES
NOTES
22
22
33
33
22
22
33
33