MT9VDDT3272G-335G3 Micron Technology Inc, MT9VDDT3272G-335G3 Datasheet - Page 8

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MT9VDDT3272G-335G3

Manufacturer Part Number
MT9VDDT3272G-335G3
Description
MODULE SDRAM DDR 256MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9VDDT3272G-335G3

Memory Type
DDR SDRAM
Memory Size
256MB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 8:
Input Capacitance
Component AC Timing and Operating Conditions
Table 9:
PDF: 09005aef80e119b2/Source: 09005aef80e11976
DD9C16_32_64x72.fm - Rev. D 1/08 EN
V
V
Symbol
DD
IN
, V
I
/V
T
OZ
I
A
I
DD
OUT
Q
Absolute Maximum Ratings
Module and Component Speed Grades
DDR components meet or exceed the listed module speed grades
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
/V
Module Speed Grade
Notes:
input 0V ≤ V
DD
Q supply voltage relative to V
-26A
Stresses greater than those listed in Table 8 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 9.
-335
-262
-265
128MB, 256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
OUT
SS
≤ V
SS
DD
1
IN
Q; DQ are
≤ V
DD
8
;
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
TN-00-08: “Thermal Applications,”
Electrical Specifications
-75E
-75Z
-75
-6
Min
–1.0
–0.5
–10
–40
©2003 Micron Technology, Inc. All rights reserved
–5
–2
–5
0
Max
+3.6
+3.2
+10
+70
+85
+5
+2
+5
available
Units
µA
µA
°C
°C
V
V

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