MT16HTF12864AY-53ED1 Micron Technology Inc, MT16HTF12864AY-53ED1 Datasheet - Page 11

• Manufacturer Part Number: MT16HTF12864AY-53ED1
• Description: MODULE DDR2 1GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53ED1

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Parameter/Condition
Operating one device bank active-precharge current;
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one device bank active-read-precharge current; I
0mA; BL = 4, CL = CL (I
t
commands; Address bus inputs are switching; Data pattern is same as
I
Precharge power-down current; All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current; All device banks open;
=
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current; All device banks open; Ccontinuous burst
reads, I
MAX (I
commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current;
(I
control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating device bank interleave read current; All device banks
interleaving reads, I
t
(I
inputs are stable during DESELECTs; Data bus inputs are switching; See
I
RC =
RAS MIN (I
DD
RAS MAX (I
RP =
CK (I
DD
DD
DD
t
CK (I
4W
7 conditions in component data sheet for detail
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DD
t
t
RP (I
RC (I
DD
DD
OUT
);
),
); CKE is LOW; Other control and address bus
t
CK =
DD
DD
= 0mA; BL = 4, CL = CL (I
DD
t
RP =
DD
); CKE is HIGH, S# is HIGH between valid commands; Address
),
),
DDR2 I
Values shown for DDR2 SDRAM components only
),
t
t
t
RAS =
RCD =
CK (I
t
t
RP =
RP (I
Notes:
OUT
DD
DD
t
DD
DD
t
RP (I
t
RAS MIN (I
),
DD
RCD (I
= 0mA; BL = 4, CL = CL (I
t
); CKE is HIGH, S# is HIGH between valid
), AL = 0;
CK =
t
Specifications and Conditions – 2GB
), AL = 0;
RC =
DD
1. a = Value calculated as one module rank in this operating condition, and all other module
2. b = Value calculated reflects all module ranks in this operating condition.
DD
); CKE is HIGH, S# is HIGH between valid
t
CK (I
t
ranks in I
RC (I
); CKE is HIGH, S# is HIGH between valid
DD
t
CK =
DD
t
DD
CK =
); CKE is HIGH, S# is HIGH between
DD
), AL = 0;
); REFRESH command at every
),
t
DD
CK (I
t
t
RRD =
CK (I
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
2
P
DD
(CKE LOW).
DD
t
CK =
),
DD
t
RRD (I
),
t
t
RC =
CK =
), AL =
t
RAS =
t
t
CK =
CK (I
t
DD
CK
t
t
RC (I
CK (I
),
t
DD
t
t
t
CK =
RCD (I
RAS MAX (I
t
CK (I
t
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
CK =
CK =
RCD =
11
),
DD
DD
t
RAS =
),
t
DD
),
CK (I
t
DD
t
t
CK (I
CK (I
t
OUT
RAS =
); CKE is
RAS =
t
) - 1 ×
RCD
t
DD
t
RFC
=
RAS
DD
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
),
);
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
I
I
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
5
6
0
1
7
a
a
b
b
a
b
b
a
b
b
b
a
1,040
1,120
1,200
1,536
1,576
4,480
2,736
-80E
856
936
112
720
160
112
Electrical Specifications
1,120
1,336
1,336
4,160
2,456
-667
776
856
112
880
960
640
160
112
©2003 Micron Technology, Inc. All rights reserved.
1,096
1,216
4,000
2,376
-53E
696
816
112
656
720
480
160
880
112
3,520
2,136
-40E
616
696
112
560
640
400
160
720
936
936
112
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA