LMH6518SQEVK National Semiconductor, LMH6518SQEVK Datasheet - Page 2

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LMH6518SQEVK

Manufacturer Part Number
LMH6518SQEVK
Description
KIT EVAL FOR LMH6518 VGA
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheets

Specifications of LMH6518SQEVK

Channels Per Ic
1 - Single
Amplifier Type
Variable Gain
Output Type
Differential
-3db Bandwidth
900MHz
Operating Temperature
-40°C ~ 85°C
Current - Supply (main Ic)
210mA
Voltage - Supply, Single/dual (±)
4.75 V ~ 5.25 V
Board Type
Fully Populated
Utilized Ic / Part
LMH6518
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Slew Rate
-
Lead Free Status / Rohs Status
Supplier Unconfirmed
www.national.com
Dynamic Performance
LSBW
Peaking
GF_0.1 dB
GF_1 dB
TRS
TRL
OS
t
t
t_recover
P
P
Noise, Distortion, and RF Specifications
e
e
e
e
NF_1
NF_2
HD2/ HD3_1
HD2/ HD3_2
HD2/ HD3_3
HD2/ HD3_4
s_1
s_2
n_1
n_2
no_1
no_2
D
D_VAR
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
CM = 2.5V, V
Auxiliary Outputs), V
bandwidth setting, gain = 18.8 dB (Preamp LG, 0 dB ladder attenuation), Full Power setting (Note 11). See “Definition of Terms
and Specifications” section for abbreviations used in the datasheet. Boldface limits apply at the temperature extremes.
ESD Tolerance (Note 5)
Supply Voltage
Differential Input
Input Common Mode Voltage
V
SPI Inputs
Maximum Junction Temperature
CM
Symbol
Human Body Model
Machine Model
Charge Device Model
V
V
CC
DD
and V
(5V nominal)
(3.3V nominal)
CM_Aux
CM
−3 dB Bandwidth
Peaking
±0.1 dB Gain Flatness
±1 dB Gain Flatness
Rise Time
Fall Time
Overshoot
Settling Time
Recovery Time
(Note 6)
Propagation Delay
Propagation Delay Variation
Input Noise Spectral Density
RMS Output Noise
Noise Figure
2
(Note 12)
= 1.2V, V
nd
/ 3
OUT
rd
Harmonic Distortion
= 0.7 V
CM_Aux
Parameter
PP
= 1.2V, Single-ended input drive, V
differential (both Main & Auxiliary Outputs), both Main and Auxiliary Output Specifications, full
(Note 2)
(Note 1)
1V to 4V
2000V
1000V
150°C
200V
5.5V
3.6V
3.6V
Unless otherwise specified, all limits are guaranteed for T
±1V
All Gains
All Gains
All Gains
All Gains
Main Output
Main Output, ±0.5%
Main Output, ±0.05%
All Gains
V
Gain Varied
Max Gain, 10 MHz
Preamp LG and 0 dB Ladder,
10 MHz
Max Gain, 100 Hz to 400 MHz
Preamp LG, 0 dB Ladder, 100 Hz
to 400 MHz
Max Gain, R
10 MHz
Preamp LG, 0 dB Ladder, R
each Input, 10 MHz
Main Output, 100 MHz, All Gains
Auxiliary Output, 100 MHz, All Gains
Main Output, 250 MHz, All Gains
Auxiliary Output, 250 MHz, All Gains
2V
OUT
= 0.7 V
2
Temperature Range (Note 4)
Junction-to-Ambient
Thermal Resistance (θJ
CC
Operating Ratings
Thermal Properties
S
Storage Temperature Range
Wave Soldering (10 sec.)
Condition
PP
Supply Voltage
Temperature Range
= 50Ω each Input,
, All Gains
Soldering Information
Infrared or Convection (20 sec.)
= 5V, V
DD
= 3.3V, R
S
= 50Ω
L
A
= 100Ω differential (both Main &
), LLP (Note 4)
(Note 8)
Min
(Note 1)
−50/ −53
−48/ −50
−44/ −50
−42/ −42
(Note 7)
0.98
13.5
Typ
900
150
400
460
450
100
940
1.2
4.1
1.7
3.8
10
14
<5
1
9
V
DD
V
−65°C to 150°C
A
−40°C to 85°C
CC
(Note 8)
= 3.3V (±5%)
= 25°C, Input
Max
= 5V (±5%)
−40°C to 85°C
235°C
260°C
nV/
40°C/W
Units
MHz
MHz
MHz
dBc
mV
dB
μV
dB
ps
ns
ns
ns
ps
%

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