cy62138fv30 Cypress Semiconductor Corporation., cy62138fv30 Datasheet

no-image

cy62138fv30

Manufacturer Part Number
cy62138fv30
Description
2-mbit 256k X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cy62138fv30LL-45BVXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
cy62138fv30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
cy62138fv30LL-45ZAXA
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62138fv30LL-45ZAXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62138fv30LL-45ZAXIT
Manufacturer:
INTERSIL
Quantity:
4 208
Part Number:
cy62138fv30LL-45ZXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Cypress Semiconductor Corporation
Document #: 001-08029 Rev. *E
Features
Logic Block Diagram
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at
• Very high speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62138CV25/30/33
• Ultra low standby power
• Ultra low active power
• Easy memory expansion with CE
• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin
— Typical standby current: 1 µA
— Maximum standby current: 5 µA
— Typical active current: 1.6 mA @ f = 1 MHz
SOIC, 32-pin TSOP I and 32-pin STSOP packages
CE 1
CE 2
WE
OE
A 0
A 1
A 2
A 10
A 11
A 3
A 4
A 5
A 6
A 7
A 8
A 9
1
, CE
2,
and OE features
198 Champion Court
COLUMN DECODER
DATA IN DRIVERS
256K x 8
ARRAY
Functional Description
The CY62138FV30 is a high performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption. Place the device into standby
mode reducing power consumption when deselected (CE
HIGH or CE
To write to the device, take Chip Enable (CE
HIGH) and Write Enable (WE) inputs LOW. Data on the eight
IO pins (IO
specified on the address pins (A
To read from the device, take Chip Enable (CE
HIGH) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins appear on
the IO pins.
The eight input and output pins (IO
in a high impedance state when the device is deselected (CE
HIGH or CE
during a write operation (CE
LOW).
POWER
2-Mbit (256K x 8) Static RAM
DOWN
San Jose
0
2
2
LOW).
through IO
LOW), the outputs are disabled (OE HIGH), or
http://www.cypress.com.
,
CA 95134-1709
CY62138FV30 MoBL
7
) is then written into the location
1
[1]
LOW and CE
0
through A
0
Revised March 26, 2007
through IO
IO 0
IO 1
IO 2
IO 3
IO 4
IO 5
IO 6
IO 7
17
2
1
).
1
HIGH and WE
LOW and CE
408-943-2600
LOW and CE
7
) are placed
®
) in
®
1
2
2
1
[+] Feedback

Related parts for cy62138fv30

cy62138fv30 Summary of contents

Page 1

... Document #: 001-08029 Rev. *E 2-Mbit (256K x 8) Static RAM Functional Description The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones ...

Page 2

... Operating I Speed (ns MHz [3] Max Typ Max 3.6 45 1.6 2.5 ® CY62138FV30 MoBL Top View ...

Page 3

... Tested initially and after any design or process changes that may affect these parameters. Document #: 001-08029 Rev Input Voltage Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 2001V (MIL-STD-883, Method 3015) Latch-up Current .................................................... > 200 mA Product CY62138FV30LL Industrial –40°C to +85°C 2.2V to 3.6V Test Conditions I = –0 –1.0 mA, V > 2.70V OH ...

Page 4

... V < 0. DATA RETENTION MODE V V > 1.5V CC(min CDR > 100 µs or stable CC(min) CC(min) is LOW and CE is HIGH LOW; when CY62138FV30 MoBL TSOP II STSOP TSOP I Unit °C/W 44.16 59.72 50.19 °C/W 11.97 15.38 14.59 90% 10% Fall Time = 1 V/ns Unit Ω Ω Ω V [3] ...

Page 5

... Test Loads and Waveforms” on page less than less than t , and t HZCE LZCE HZOE LZOE = V , and All signals must be ACTIVE to initiate a write and any of these ® CY62138FV30 MoBL 45 ns Unit Min Max ...

Page 6

... Document #: 001-08029 Rev. *E [15, 16 OHA DOE DATA VALID 50 SCE PWE t SD DATA VALID , transition HIGH. 2 ® CY62138FV30 MoBL DATA VALID t HZOE t HZCE HIGH IMPEDANCE 50 Page [+] Feedback ...

Page 7

... WC t SCE PWE t SD DATA VALID Inputs/Outputs High-Z Deselect/Power Down High-Z Deselect/Power Down Data Out Read High-Z Output Disabled Data in Write ® CY62138FV30 MoBL LZWE Mode Power Standby ( Standby ( Active ( Active (I ) ...

Page 8

... 6.00±0.10 SEATING PLANE C Document #: 001-08029 Rev. *E CY62138FV30 MoBL Package Type 36-ball VFBGA (Pb-free) 32-pin TSOP II (Pb-free) 32-pin STSOP (Pb-free) 32-pin TSOP I (Pb-free) 32-pin SOIC (Pb-free) A 0.15(4X) ® Operating Range Industrial BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø ...

Page 9

... Package Diagrams (continued) Figure 2. 32-pin TSOP II, 51-85095 Document #: 001-08029 Rev. *E ® CY62138FV30 MoBL 51-85095-** Page [+] Feedback ...

Page 10

... Document #: 001-08029 Rev 0.546[13.868] 0.566[14.376] 0.440[11.176] 0.450[11.430] 32 0.006[0.152] 0.012[0.304] 0.118[2.997] MAX. 0.004[0.102] 0.004[0.102] MIN. SEATING PLANE ® CY62138FV30 MoBL 0.047[1.193] 0.063[1.600] 0.023[0.584] 0.039[0.990] 51-85081-*B Page [+] Feedback ...

Page 11

... Package Diagrams (continued) Figure 4. 32-pin TSOP mm), 51-85056 Document #: 001-08029 Rev. *E ® CY62138FV30 MoBL 51-85056-*D Page [+] Feedback ...

Page 12

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. ® CY62138FV30 MoBL 51-85094-*D Page ...

Page 13

... Document History Page Document Title: CY62138FV30 MoBL Document Number: 001-08029 Issue Orig. of REV. ECN NO. Date Change ** 463660 See ECN NXR *A 467351 See ECN NXR *B 566724 See ECN NXR *C 797956 See ECN VKN *D 809101 See ECN VKN *E 940341 See ECN VKN Document #: 001-08029 Rev. *E ® ...

Related keywords