PESD3V3S2UQ,115 NXP Semiconductors, PESD3V3S2UQ,115 Datasheet - Page 8

• Manufacturer Part Number: PESD3V3S2UQ,115
• Description: DIODE DBL ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.6V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 8 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 15 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 200 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Operating Temperature Min Deg. C: -65C
• Operating Temperature Max Deg. C: 150C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4519-2; 934057839115; PESD3V3S2UQ T/R; PESD3V3S2UQ T/R

NXP Semiconductors
Double ESD protection diodes
in SOT663 package
I
R(25 C)
I
PESD12VS2UQ; V
PESD15VS2UQ; V
PESD24VS2UQ; V
Fig.8
(1) PESD3V3S2UQ; V
(2) PESD5V0S2UQ; V
R
I
R
10
is less than 15 nA at 150 C for:
10
1
1
100
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
50
RWM
RWM
RWM
RWM
RWM
= 12 V.
= 15 V.
= 24 V.
0
= 3.3 V.
= 5 V.
50
100
001aaa729
T
(1)
(2)
j
( C)
150
Rev. 03 - 11 September 2008
PESDxS2UQ series
Product specification
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