PESD3V3L4UG,115 NXP Semiconductors, PESD3V3L4UG,115 Datasheet - Page 11

DIODE QUAD ESD PROTECTION SOT353

PESD3V3L4UG,115

Manufacturer Part Number
PESD3V3L4UG,115
Description
DIODE QUAD ESD PROTECTION SOT353
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD3V3L4UG,115

Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
30W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
30 W
Capacitance
28 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05 mm W x 1.5 mm L x 0.5 mm H
Number Of Elements
4
Operating Temperature Classification
Military
Reverse Breakdown Voltage
5.32V
Reverse Stand-off Voltage
3.3V
Leakage Current (max)
300nA
Peak Pulse Current
3A
Test Current (it)
1mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4042-2
934057784115
PESD3V3L4UG T/R
PESD3V3L4UG T/R
NXP Semiconductors
8. Package outline
PESDXL4UF_G_W_4
Product data sheet
Fig 10. Package outline PESDxL4UF (SOT886)
Fig 12. Package outline PESDxL4UW (SOT665)
Dimensions in mm
1.5
1.4
0.5
0.5
0.40
0.32
3
2
1
1.05
0.95
0.6
0.35
0.27
4
5
6
0.25
0.17
1.7
1.5
Dimensions in mm
1.3
1.1
Low capacitance unidirectional quadruple ESD protection diode arrays
0.50
max
Rev. 04 — 28 February 2008
5
1
04-07-22
0.5
0.04
max
1.7
1.5
1
2
Fig 11. Package outline PESDxL4UG (SOT353/SC-88A)
2.2
2.0
3
4
Dimensions in mm
0.27
0.17
1.35
1.15
0.3
0.1
5
0.6
0.5
1
0.65
0.18
0.08
PESDxL4UF/G/W
04-11-08
1.3
2.2
1.8
2
3
4
0.3
0.2
0.45
0.15
© NXP B.V. 2008. All rights reserved.
0.25
0.10
1.1
0.8
04-11-16
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