PESD3V3L4UG,115 NXP Semiconductors, PESD3V3L4UG,115 Datasheet - Page 6

DIODE QUAD ESD PROTECTION SOT353

PESD3V3L4UG,115

Manufacturer Part Number
PESD3V3L4UG,115
Description
DIODE QUAD ESD PROTECTION SOT353
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD3V3L4UG,115

Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
30W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
8 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
30 W
Capacitance
28 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05 mm W x 1.5 mm L x 0.5 mm H
Number Of Elements
4
Operating Temperature Classification
Military
Reverse Breakdown Voltage
5.32V
Reverse Stand-off Voltage
3.3V
Leakage Current (max)
300nA
Peak Pulse Current
3A
Test Current (it)
1mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4042-2
934057784115
PESD3V3L4UG T/R
PESD3V3L4UG T/R
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Table 9.
T
[1]
[2]
[3]
Symbol Parameter
C
V
r
dif
amb
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
= 25 C unless otherwise specified.
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Low capacitance unidirectional quadruple ESD protection diode arrays
Rev. 04 — 28 February 2008
…continued
Conditions
f = 1 MHz;
V
I
I
I
I
I
PP
PP
PP
PP
R
R
= 1 mA
= 0 V
= 1 A
= 3 A
= 1 A
= 2.5 A
[1][2][3]
PESDxL4UF/G/W
Min
-
-
-
-
-
-
-
-
Typ
22
16
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
28
19
8
12
10
13
200
100
Unit
pF
pF
V
V
V
V
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