PESD5V0L6US,118 NXP Semiconductors, PESD5V0L6US,118 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0L6US,118
• Description: DIODE 6FOLD ESD PROTECT 8-SOIC
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L6US,118

• Package / Case: 8-SOIC (3.9mm Width)
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.8V
• Power (watts): 35W
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Number Of Elements: 6
• Package Type: SO
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.4V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 8
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 15 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 6
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4520-2; 934057934118; PESD5V0L6US /T3; PESD5V0L6US /T3

NXP Semiconductors
5. Limiting values
PESD5V0L6UAS_US_3
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol
ESD
Standard
IEC 61000-4-2, level 4 (ESD); see
HBM MIL-STD883, class 3
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponentially decay waveform according to IEC 61000-4-5;
see
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Figure
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
electrostatic discharge
capability
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
1.
PESD5V0L6UAS; PESD5V0L6US
Rev. 03 — 18 August 2009
Figure 2
Low capacitance 6-fold ESD protection diode arrays
Conditions
IEC 61000-4-2
(contact discharge)
HBM MIL-STD883
Conditions
8/20 s pulse
8/20 s pulse
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
65
65
Figure
© NXP B.V. 2009. All rights reserved.
Max
35
2.5
150
+150
+150
Max
20
10
2.
Unit
W
A
Unit
kV
kV
C
C
C
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