PESD5V0L6US,118 NXP Semiconductors, PESD5V0L6US,118 Datasheet - Page 6

• Manufacturer Part Number: PESD5V0L6US,118
• Description: DIODE 6FOLD ESD PROTECT 8-SOIC
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L6US,118

• Package / Case: 8-SOIC (3.9mm Width)
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.8V
• Power (watts): 35W
• Polarization: 6 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 15 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.4 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 4(Max) mm W x 5(Max) mm L
• Number Of Elements: 6
• Package Type: SO
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.4V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 8
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 15 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 6
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4520-2; 934057934118; PESD5V0L6US /T3; PESD5V0L6US /T3

NXP Semiconductors
PESD5V0L6UAS_US_3
Product data sheet
Fig 3.
Fig 5.
(pF)
P
(W)
C
pp
10
d
10
18
16
14
12
10
1
8
2
1
0
T
Peak pulse power as a function of exponential
pulse duration t
Diode capacitance as a function of reverse
voltage; typical values
T
amb
amb
= 25 C
= 25 C; f = 1 MHz
1
10
2
p
; typical values
10
2
3
10
3
4
001aaa192
001aaa194
t
p
V
( s)
R
PESD5V0L6UAS; PESD5V0L6US
(V)
10
Rev. 03 — 18 August 2009
5
4
Low capacitance 6-fold ESD protection diode arrays
Fig 4.
Fig 6.
P
I
RM(25˚C)
PP(25 C)
P
I
RM
PP
10
1.2
0.8
0.4
10
1
0
1
100
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
50
50
0
100
50
150
© NXP B.V. 2009. All rights reserved.
100
001aaa193
T
001aaa195
T
j
( C)
j
( C)
200
150
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