ST72F324BJ6B6 STMicroelectronics, ST72F324BJ6B6 Datasheet - Page 154

MCU 8BIT 32KB FLASH/ROM 42-SDIP

ST72F324BJ6B6

Manufacturer Part Number
ST72F324BJ6B6
Description
MCU 8BIT 32KB FLASH/ROM 42-SDIP
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet

Specifications of ST72F324BJ6B6

Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3.8 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
42-SDIP (0.600", 15.24mm)
Controller Family/series
ST7
No. Of I/o's
32
Ram Memory Size
1KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
SCI, SPI
No. Of Pwm Channels
3
Processor Series
ST72F3x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Development Tools By Supplier
ST7232X-EVAL, ST7MDT20-DVP3, ST7MDT20J-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
For Use With
497-6421 - BOARD EVAL DGTL BATT CHGR DESIGN497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
497-5589-5
Electrical characteristics
12.7.2
154/193
Flash memory
Table 101. Dual voltage HDFlash memory
1. Data based on characterization results, not tested in production.
2. V
3. Data based on simulation results, not tested in production.
Symbol
T
T
ERASE
N
f
t
t
V
PROG
reasons.
CPU
I
I
VPP
RET
DD
PP
RW
PP
PP
must be applied only during the programming or erasing operation and not permanently for reliability
Operating frequency
Programming voltage
Supply current
V
Internal V
Data retention
Write erase cycles
Programming or erasing
temperature range
PP
current
PP
Parameter
(3)
stabilization time
(3)
(2)
Read mode
Write/Erase mode
4.5 V < V
Write/Erase
Read (V
Write/Erase
T
T
Conditions
T
A
A
T
T
A
A
A
= 105 °C
= 125 °C
PP
= 85 °C
=85 °C
=55 °C
DD
= 12 V)
< 5.5 V
Min
1000
11.4
100
-40
40
15
0
1
7
(1)
Typ
<10
10
25
Max
12.6
ST72324Bxx
200
30
85
8
8
(1)
cycles
cycles
years
MHz
Unit
mA
µA
µA
°C
µs
V

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