C8051F988-GM Silicon Laboratories Inc, C8051F988-GM Datasheet - Page 56
![IC MCU 8BIT 4KB FLASH 24QFN](/photos/12/15/121587/c8051f9xx_24-qfn_sml.jpg)
C8051F988-GM
Manufacturer Part Number
C8051F988-GM
Description
IC MCU 8BIT 4KB FLASH 24QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Specifications of C8051F988-GM
Program Memory Type
FLASH
Program Memory Size
4KB (4K x 8)
Package / Case
24-UQFN Exposed Pad, 24-HUQFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
17
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Ram Size
512 B
Interface Type
I2C, SMBus, Enhanced UART, Enhanced SPI
Maximum Clock Frequency
7 KHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.4 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F996DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
On-chip Dac
10 bit, 4 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1959-5
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- Download datasheet (3Mb)
C8051F99x-C8051F98x
Table 4.5. Power Management Electrical Specifications
V
Table 4.6. Flash Electrical Characteristics
V
Table 4.7. Internal Precision Oscillator Electrical Characteristics
V
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
V
56
Flash Size
Endurance
Erase Cycle Time
Write Cycle Time
Idle Mode Wake-up Time
Suspend Mode Wake-up Time
Sleep Mode Wake-up Time
Oscillator Frequency
Oscillator Supply Current
(from V
*Note: Does not include clock divider or clock tree supply current.
Oscillator Frequency
Oscillator Supply Current
(from V
*Note: Does not include clock divider or clock tree supply current.
DD
DD
DD
DD
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
= 1.8 to 3.6 V; T
= 1.8 to 3.6 V; T
Parameter
DD
DD
Parameter
)
Parameter
)
Parameter
A
A
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
C8051F980/1/6/7, C8051F990/1/6/7
25 °C; includes bias current
C8051F982/3/8/9
Low Power or Precision Osc.
No separate bias current
Conditions
C8051F985
V
V
–40 to +85 °C,
–40 to +85 °C,
DD
of 90–100 µA
DD
Conditions
Conditions
CLKDIV = 0x00
required
Conditions
= 1.8–3.6 V
= 1.8–3.6 V
25 °C
Rev. 1.0
8192
4096
2048
20 k
Min
Min
Min
28
57
24
18
—
—
Min
—
—
2
100k
Typ
300*
100*
24.5
32
64
—
—
—
Typ
Typ
20
Typ
400
—
2
Max
—
—
—
—
36
71
Max
Max
Max
25
22
—
—
—
—
3
Erase/Write
SYSCLKs
Cycles
Units
bytes
bytes
bytes
Units
Units
ms
MHz
MHz
Units
µs
µA
µA
ns
µs
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