MC908JB16DWE Freescale Semiconductor, MC908JB16DWE Datasheet - Page 61
MC908JB16DWE
Manufacturer Part Number
MC908JB16DWE
Description
IC MCU 16K FLASH 6MHZ USB 28SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Specifications of MC908JB16DWE
Core Processor
HC08
Core Size
8-Bit
Speed
6MHz
Connectivity
SCI, USB
Peripherals
LED, LVD, POR, PWM
Number Of I /o
21
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOIC (7.5mm Width)
Processor Series
HC08JB
Core
HC08
Data Bus Width
8 bit
Data Ram Size
384 B
Interface Type
I2C/SCI/SPI/USB
Maximum Clock Frequency
12 MHz
Number Of Programmable I/os
21
Number Of Timers
4
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
Minimum Operating Temperature
0 C
Controller Family/series
HC08
No. Of I/o's
21
Ram Memory Size
384Byte
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908JB16DWE
Manufacturer:
FREESCALE
Quantity:
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Part Number:
MC908JB16DWE
Manufacturer:
FRE/MOT
Quantity:
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4.4 FLASH Control Register
MC68HC908JB16
Freescale Semiconductor
—
Rev. 1.1
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operation.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM=1 or ERASE=1 and the sequence for erase or
program/verify is followed.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
$FE08
Bit 7
0
0
Figure 4-2. FLASH Control Register (FLCR)
= Unimplemented
FLASH Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
FLASH Memory
1
0
Technical Data
PGM
Bit 0
0
61
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