HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 474

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Bit 1—Erase Mode (E):
Bit 1: E
0
1
Bit 0—Program Mode (P):
Bit 0: P
0
1
Notes: *1 Do not set two or more of these bits simultaneously. Do not release or shut off the V
20.2.2
EBR1 is an 8-bit register that designates large flash-memory blocks for programming and erasure.
EBR1 is initialized to H'00 by a reset, in the standby modes, and when 12 V is not applied to FV
pin. When a bit in EBR1 is set to 1, the corresponding block is selected and can be programmed
and erased. Figure 20.2 and table 20.6 show details of a block map.
Notes: *1 The initial value is H'00 in modes 2 and 3 (on-chip ROM enabled). In mode 1 (on-chip
442
Bit
Initial value
Read/Write
*2 Set the P or E bit according to the instructions given in section 20.4, Programming and
*2 This bit cannot be modified mode 2.
Erase Block Register 1 (EBR1)
or V
Erasing Flash Memory.
Set the watchdog timer beforehand to make sure that these bits do not remain set for
longer than the specified times.
For notes on use, see section 20.7, Flash Memory Programming and Erasing
Precautions.
ROM disabled), this register cannot be modified and always reads H'FF.
For information on accessing this register, refer to in section 20.7, Flash Memory
Programming and Erasing Precautions (11).
*1
PP
R/W
power supply when these bits are set.
LB7
Description
Exit from erase mode
Transition to erase mode
Description
Exit from program mode
Transition to program mode
7
0
*1, *2
*1, *2
*1, *2
R/W
Selects transition to or exit from erase mode.
LB6
6
0
Selects transition to or exit from program mode.
*1
R/W
LB5
5
0
*1
R/W
LB4
4
0
*1
R/W
LB3
3
0
*1
R/W
LB2
2
0
*1
R/W
LB1
1
0
*1
(Initial value)
(Initial value)
R/W
LB0
0
0
*1
CC
PP