HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 490

• Manufacturer Part Number: HD64F3437TFI16V
• Description: MCU FLASH 60K 100-TQFP
• Manufacturer: Renesas Electronics America

Specifications of HD64F3437TFI16V

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20.4.3
Flowchart for Programming One Byte
458
(set bit of block to be programmed to 1)
(clear bit of programmed block to 0)
Write data to flash memory (flash
End (1-byte data programmed)
Select program-verify mode
Enable watchdog timer
Disable watchdog timer
Verify
Set erase block register
Clear erase block register
(PV bit = 1 in FLMCR)
Programming Flowchart and Sample Program
memory latches write
address and data)
Select program mode
(P bit = 1 in FLMCR)
Wait (t
Wait (x) s
*3
Clear PV bit
Clear P bit
(read memory)
Start
n = 1
vs
1) s
OK
*4
*5
*1
*2
Figure 20.8 Programming Flowchart
No go
End of programming
Programming error
Clear PV bit
n
N?
Yes
*5
Notes: *1 Write the data to be programmed
*2 Set the timer overflow interval as
*3 Read the memory data to be
*4 Programming time x, which is
*5 t
with a byte transfer instruction.
follows.
CKS2 = 0, CKS1 = 0, CKS0 = 1
verified with a byte transfer
instruction.
determined by the initial time
(n = 1, 2, 3, 4, 5, 6), increases in
proportion to n. Thus, set the initial
time to 15.8 s or less to make total
programming time 1 ms or less.
N:
End of verification
VS
No
1: 4 s or more
6 (set N so that total
programming time does not
exceed 1 ms)
Double programming time
(x
n + 1
2 x)
n
2
n–1