HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 490
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HD64F3437TFI16V
Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet
1.HD64F3437TFI16V.pdf
(755 pages)
Specifications of HD64F3437TFI16V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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20.4.3
Flowchart for Programming One Byte
458
(set bit of block to be programmed to 1)
(clear bit of programmed block to 0)
Write data to flash memory (flash
End (1-byte data programmed)
Select program-verify mode
Enable watchdog timer
Disable watchdog timer
Verify
Set erase block register
Clear erase block register
(PV bit = 1 in FLMCR)
Programming Flowchart and Sample Program
memory latches write
address and data)
Select program mode
(P bit = 1 in FLMCR)
Wait (t
Wait (x) s
*3
Clear PV bit
Clear P bit
(read memory)
Start
n = 1
vs
1) s
OK
*4
*5
*1
*2
Figure 20.8 Programming Flowchart
No go
End of programming
Programming error
Clear PV bit
n
N?
Yes
*5
Notes: *1 Write the data to be programmed
*2 Set the timer overflow interval as
*3 Read the memory data to be
*4 Programming time x, which is
*5 t
with a byte transfer instruction.
follows.
CKS2 = 0, CKS1 = 0, CKS0 = 1
verified with a byte transfer
instruction.
determined by the initial time
(n = 1, 2, 3, 4, 5, 6), increases in
proportion to n. Thus, set the initial
time to 15.8 s or less to make total
programming time 1 ms or less.
N:
End of verification
VS
No
1: 4 s or more
6 (set N so that total
programming time does not
exceed 1 ms)
Double programming time
(x
n + 1
2 x)
n
2
n–1
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