AT32UC3A364-ALUT Atmel, AT32UC3A364-ALUT Datasheet - Page 222
AT32UC3A364-ALUT
Manufacturer Part Number
AT32UC3A364-ALUT
Description
IC MCU 64KB FLASH 144LQFP
Manufacturer
Atmel
Series
AVR®32 UC3r
Specifications of AT32UC3A364-ALUT
Core Processor
AVR
Core Size
32-Bit
Speed
66MHz
Connectivity
EBI/EMI, I²C, IrDA, MMC, SPI, SSC, UART/USART, USB OTG
Peripherals
Brown-out Detect/Reset, DMA, POR, WDT
Number Of I /o
110
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Processor Series
AT32UC3x
Core
AVR32
Data Bus Width
32 bit
Data Ram Size
96 KB
Interface Type
IrDA/SCI/SCIF/UDI
Maximum Clock Frequency
66 MHz
Number Of Timers
3
Operating Supply Voltage
3 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR32, EWAVR32-BL, KSK-EVK1100-PL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATEXTWIFI, ATEVK1104
Minimum Operating Temperature
- 40 C
Controller Family/series
AT32UC3A
No. Of I/o's
110
Ram Memory Size
64KB
Cpu Speed
66MHz
No. Of Timers
2
Rohs Compliant
Yes
For Use With
ATEVK1104 - KIT DEV/EVAL FOR AVR32 AT32UC3AATAVRONEKIT - KIT AVR/AVR32 DEBUGGER/PROGRMMRATEVK1100 - KIT DEV/EVAL FOR AVR32 AT32UC3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Figure 16-3. SDRAM Device Initialization Sequence
16.7.2
32072C–AVR32–2010/03
SDRAMC_A[12:11]
SDRAMC_A[9:0]
SDCKE
NCS[1]
SDWE
SDCK
RAS
CAS
DQM
SDRAM Controller Write Cycle
A10
Inputs Stable for
200 usec
After initialization, the SDRAM devices are fully functional.
The SDRAMC allows burst access or single access. In both cases, the SDRAMC keeps track of
the active row in each bank, thus maximizing performance. To initiate a burst access, the
SDRAMC uses the transfer type signal provided by the master requesting the access. If the next
access is a sequential write access, writing to the SDRAM device is carried out. If the next
access is a write-sequential access, but the current access is to a boundary page, or if the next
access is in another row, then the SDRAMC generates a precharge command, activates the
new row and initiates a write command. To comply with SDRAM timing parameters, additional
clock cycles are inserted between precharge and active (t
and write (t
16.8.3. This is described in
10. The user must go into Normal Mode, writing the value 0 to the MR.MODE field and per-
11. Write the refresh rate into the Refresh Timer Count field in the Refresh Timer Register
Precharge All Banks
forming a write access at any location in the SDRAM.
(TR.COUNT). The refresh rate is the delay between two successive refresh cycles. The
SDRAM device requires a refresh every 15.625µs or 7.81µs. With a 100MHz fre-
quency, the TR register must be written with the value 1562 (15.625 µs x 100 MHz) or
781 (7.81 µs x 100 MHz).
RCD
) commands. For definition of these timing parameters, refer to the
t
RP
1st Auto Refresh
Figure 16-4 on page
8th Auto Refresh
223.
t
RC
RP
) commands and between active
LMR Command
AT32UC3A3/A4
t
MRD
Valid Command
Section
222
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