STM32F103C8T6TR STMicroelectronics, STM32F103C8T6TR Datasheet - Page 63

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STM32F103C8T6TR

Manufacturer Part Number
STM32F103C8T6TR
Description
MCU ARM 64KB FLASH MEM 48-LQFP
Manufacturer
STMicroelectronics
Series
STM32r

Specifications of STM32F103C8T6TR

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
37
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
For Use With
497-10048 - BOARD EVAL ACCELEROMETER497-10030 - STARTER KIT FOR STM32497-8511 - KIT STARTER FOR STM32 512K FLASH497-6438 - BOARD EVALUTION FOR STM32 512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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STM32F103x8, STM32F103xB
5.3.13
Figure 29. I/O AC characteristics definition
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, R
Unless otherwise specified, the parameters given in
performed under the ambient temperature and V
in
Table 37.
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution
V
V
V
V
V
Table
NF(NRST)
IH(NRST)
IL(NRST)
Symbol
F(NRST)
hys(NRST)
to the series resistance must be minimum
R
PU
9.
(1)
(1)
(1)
(1)
PU
NRST pin characteristics
(see
NRST Input low level voltage
NRST Input high level voltage
NRST Schmitt trigger voltage
hysteresis
Weak pull-up equivalent resistor
NRST Input filtered pulse
NRST Input not filtered pulse
EXT ERNAL
OUTPUT
ON 50pF
Maximum frequency is achieved if (t r + t f ) 2/3)T and if the duty cycle is (45-55%)
Table
34).
Parameter
t r(I O)out
Doc ID 13587 Rev 12
(~10% order)
10%
50%
when loaded by 50pF
90%
(2)
.
Conditions
DD
V
IN
T
10%
supply voltage conditions summarized

Table 37
V
50%
SS
90%
t r(I O)out
are derived from tests
–0.5
Min
300
30
2
Electrical characteristics
Typ
200
40
V
DD
Max
100
0.8
50
+0.5
ai14131
Unit
mV
63/96
k
ns
ns
V

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