UPD70F3744GJ-GAE-AX Renesas Electronics America, UPD70F3744GJ-GAE-AX Datasheet - Page 758
UPD70F3744GJ-GAE-AX
Manufacturer Part Number
UPD70F3744GJ-GAE-AX
Description
MCU 32BIT V850ES/JX3 144-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3r
Datasheet
1.UPD70F3743GJ-GAE-AX.pdf
(911 pages)
Specifications of UPD70F3744GJ-GAE-AX
Core Processor
RISC
Core Size
32-Bit
Speed
32MHz
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
128
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
2.85 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPD70F3744GJ-GAE-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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V850ES/JJ3
27.3 Functional Outline
programmer, regardless of whether the V850ES/JJ3 has already been mounted on the target system or not (off-board/on-
board programming).
supported, so that the program cannot be changed by an unauthorized person.
program is changed after production/shipment of the target system. A boot swap function that rewrites the entire flash
memory area safely is also supported. In addition, interrupt servicing is supported during self programming, so that the
flash memory can be rewritten under various conditions, such as while communicating with an external device.
R01UH0016EJ0400 Rev.4.00
Sep 30, 2010
On-board programming
Off-board programming
Self programming
The internal flash memory of the V850ES/JJ3 can be rewritten by using the rewrite function of the dedicated flash
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming) is ideal for an application where it is assumed that the
Remark
Rewrite Method
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash programmer and a dedicated
program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of off-board/on-
board programming. (During self-programming, instructions cannot be
fetched from or data access cannot be made to the internal flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory in advance.)
Table 27-1. Rewrite Method
Functional Outline
CHAPTER 27 FLASH MEMORY
Flash memory
programming mode
Normal operation mode
Operation Mode
Page 742 of 892
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