MC68HC908JB8JDW Freescale Semiconductor, MC68HC908JB8JDW Datasheet - Page 56

• Manufacturer Part Number: MC68HC908JB8JDW
• Description: IC MCU 8K FLASH 3MHZ 20-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908JB8JDW

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: USB
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -

FLASH Memory
4.5 FLASH Block Erase Operation
Technical Data
56
NOTE:
NOTE:
Use the following procedure to erase a block of FLASH memory. A block
consists of 512 consecutive bytes starting from addresses $X000,
$X200, $X400, $X600, $X800, $XA00, $XC00 or $XE00. Any block
within the 8,192 bytes user memory area ($DC00–$FBFF) can be
erased alone.
The 16-byte user vectors, $FFF0–$FFFF, cannot be erased by the block
erase operation because of security reasons. Mass erase is required to
erase this block.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
the block to be erased.
again.
FLASH Memory
rcv
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
(1 µs), the memory can be accessed in read mode
erase
nvs
nvh
(5 µs).
(5 µs).
(2 ms).
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