FDS8958A_F085 Fairchild Semiconductor, FDS8958A_F085 Datasheet
FDS8958A_F085
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FDS8958A_F085 Summary of contents
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... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device FDS8958A FDS8958A_F085 ©2010 Fairchild Semiconductor Corporation FDS8958A_F085 Rev. A ® ® ® ® MOSFET Features • Q1: N-Channel 7.0A, 30V PowerTrench • Q2: P-Channel -5A, -30V • ...
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... I On-State Drain Current D(on) g Forward Transconductance FS Dynamic Characteristics C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss R Gate Resistance G FDS8958A_F085 Rev 25°C unless otherwise noted A Test Conditions Type Min Typ Max Units = 250 µ -250 µ 250 µA, Referenced to 25°C ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25° 3mH 6A 30V Starting TJ = 25° 3mH 3A 30V FDS8958A_F085 Rev. A (continued 25°C unless otherwise noted A Test Conditions (Note Ω 10V GEN ...
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... T , JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature 125 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS8958A_F085 Rev. A 2.2 3.5V 1 1.4 3.0V 1 0.6 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 0.07 0.06 0.05 0.04 0. 0.02 0.01 75 100 ...
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... R = 135 C/W θ 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.001 0.01 Figure 11. Single Pulse Maximum Power Dissipation. FDS8958A_F085 Rev. A 800 V = 10V 20V DS 600 15V 400 200 C rss Figure 8. Capacitance Characteristics. 10 100µs 1ms 10ms 1 0.01 10 100 Figure 10. Unclamped Inductive Switching ...
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... T , JUNCTION TEMPERATURE ( J Figure 14. On-Resistance Variation with Temperature - 1 GATE TO SOURCE VOLTAGE (V) GS Figure 16. Transfer Characteristics. FDS8958A_F085 Rev 1.8 -4.5V 1.6 -4.0V 1.4 1.2 -3.5V 1 -3.0V 0 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 0.2 0. 100 ...
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... SINGLE PULSE 0.001 0.0001 0.001 Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958A_F085 Rev. A 0.01 0 TIME (sec ( 135 °C/W ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS8958A_F085 Rev. A ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...