APT2X21DC120J Microsemi Power Products Group, APT2X21DC120J Datasheet - Page 3

• Manufacturer Part Number: APT2X21DC120J
• Description: DIODE SIC PAR 1200V 20A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X21DC120J

• Voltage - Forward (vf) (max) @ If: 1.8V @ 20A
• Current - Reverse Leakage @ Vr: 400µA @ 1200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 0ns
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Diode Performance Curve
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
1400
1200
1000
0.00001
40
30
20
10
800
600
400
200
1
0
0
0
0
1
0.05
0.7
0.5
0.9
0.3
0.1
Capacitance vs.Reverse Voltage
0.5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Forward Characteristics
V
T
F
1
J
V
Forward Voltage (V)
=75°C
R
10
0.0001
T
Reverse Voltage
J
=25°C
1.5
2
T
100
J
=175°C
2.5
T
0.001
Rectangular Pulse Duration (Seconds)
J
=125°C
3
1000
3.5
Single Pulse
www.microsemi.com
0.01
200
150
100
50
0
400
APT2X21DC120J
APT2X20DC120J
0.1
600
Reverse Characteristics
V
R
800
Reverse Voltage (V)
T
J
=175°C
T
J
=125°C
1000 1200 1400 1600
T
J
=75°C
1
T
J
=25°C
10
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