APT2X31D100J Microsemi Power Products Group, APT2X31D100J Datasheet - Page 3

• Manufacturer Part Number: APT2X31D100J
• Description: DIODE DUAL 28A 1000V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X31D100J

• Voltage - Forward (vf) (max) @ If: 2.3V @ 30A
• Current - Reverse Leakage @ Vr: 250µA @ 1000V
• Current - Average Rectified (io) (per Diode): 28A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 290ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
6000
5000
4000
3000
2000
1000
100
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
J
F
R
F
60A
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
t
= 667V
, ANODE-TO-CATHODE VOLTAGE (V)
rr
J
200
, JUNCTION TEMPERATURE (°C)
0.5
25
T
V
J
I
R
RRM
= 125°C
, REVERSE VOLTAGE (V)
T
400
J
50
1
= 150°C
Q
rr
10
600
1.5
75
15A
800
100
2
t
rr
T
T
J
1000
J
Q
125
2.5
= -55°C
= 25°C
30A
rr
100 200
1200
150
3.
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
J
F
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
60A
15A
60A
600
600
100
30A
800
800
125
30A
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 667V
15A
1200
1200
175