APT2X101DQ100J Microsemi Power Products Group, APT2X101DQ100J Datasheet - Page 3

• Manufacturer Part Number: APT2X101DQ100J
• Description: DIODE DUAL PAR 100A 1000V SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X101DQ100J

• Voltage - Forward (vf) (max) @ If: 2.7V @ 100A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 290ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT2X101DQ100JMI; APT2X101DQ100JMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
9000
8000
7000
6000
5000
4000
3000
2000
1000
300
250
200
150
100
800
700
600
500
400
300
200
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
I
T
V
V
RRM
J
F
R
F
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
= 667V
J
200
, JUNCTION TEMPERATURE (°C)
0.5
25
V
150A
t
R
rr
T
, REVERSE VOLTAGE (V)
T
J
J
400
= 125°C
1.0
50
= 175°C
Q
10
rr
600
1.5
75
50A
800
100
2.0
T
J
t
rr
= -55°C
T
1000
J
Q
125
2.5
= 25°C
100 200
rr
100A
1200
3.0
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
160
140
120
100
50
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
25
-di
-di
T
V
F
J
T
F
R
V
/dt, CURRENT RATE OF CHANGE(A/µs)
J
= 125°C
R
/dt, CURRENT RATE OF CHANGE (A/µs)
= 667V
= 125°C
200
= 667V
200
50
Case Temperature (°C)
400
400
75
150A
600
600
100
150A
50A
100A
800
800
125
100A
Duty cycle = 0.5
T
1000
1000
J
150
= 175°C
50A
1200
1200
175