APT80GP60J Microsemi Power Products Group, APT80GP60J Datasheet - Page 5

• Manufacturer Part Number: APT80GP60J
• Description: IGBT 600V 151A 462W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT80GP60J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 80A
• Current - Collector (ic) (max): 151A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 9.84nF @ 25V
• Power - Max: 462W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT80GP60JMI; APT80GP60JMI

TYPICAL PERFORMANCE CURVES
Case temperature(°C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
20,000
10,000
5,000
1,000
0.30
0.25
0.20
0.15
0.10
0.05
Junction
temp (°C)
500
100
50
10
0
10
(watts)
Power
0
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.9
0.5
0.05
0.7
0.3
0.1
RC MODEL
20
0.0260
0.0584
0.185
10
30
-4
SINGLE PULSE
40
RECTANGULAR PULSE DURATION (SECONDS)
C res
C ies
C oes
0.00119F
0.0354F
0.463F
50
10
-3
Figure 20, Operating Frequency vs Collector Current
190
100
50
10
1
10 20 30 40 50 60 70 80 90 100 110 130
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 5
2m50
10
= 400V
300
200
150
100
I
-2
C
50
°
°
C
0
, COLLECTOR CURRENT (A)
C
0
100
200
Note:
300
Peak T J = P DM x Z JC + T C
10
Duty Factor D =
-1
400
t 1
t 2
500
t 1
/ t
F
f
f
P
600
2
max1
max 2
max
diss
1.0
APT80GP60J
700
min(f
T
t
E
P
J
R
d (on )
diss
on 2
JC
T
max1
C
P
E
t
cond
0.05
r
, f
off
max 2
t
d(off )
)
t
f