APT200GN60J Microsemi Power Products Group, APT200GN60J Datasheet - Page 2

• Manufacturer Part Number: APT200GN60J
• Description: IGBT 600V 283A 682W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT200GN60J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 200A
• Current - Collector (ic) (max): 283A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 14.1nF @ 25V
• Power - Max: 682W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT200GN60JMI; APT200GN60JMI

1
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
SCSOA
Symbol
V
Torque
SSOA
V
Isolation
t
t
t
t
R
R
C
E
E
E
E
Repetitive Rating: Pulse width limited by maximum junction temperature.
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
G
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (
Package Weight
Maximum Terminal & Mounting Torque
ces
includes both IGBT and FRED leakages
50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.)
3
6
4
4
66
4
G(int)
55
5
nor gate driver impedance. (MIC4452)
T
Inductive Switching (125°C)
15V, L = 100µH, V
J
Inductive Switching (25°C)
= 175°C, R
T
V
V
J
CC
GE
= 150°C, R
Test Conditions
= 360V, V
Capacitance
Gate Charge
= 0V, V
T
V
R
R
V
V
T
V
V
V
f = 1 MHz
I
I
I
J
CE
CC
G
J
G
C
C
CC
C
GE
GE
GE
= +125°C
= +25°C
= 1.0Ω
= 1.0Ω
= 100A
= 200A
= 200A
= 300V
G
= 400V
=400V
= 15V
= 15V
= 15V
= 1.0Ω
CE
G
GE
= 1.0Ω
CE
= 25V
7
7
= 15V,
= 600V
7
, V
GE
7
=
2500
MIN
600
MIN
5
14100
4610
4000
1180
1.03
29.2
TYP
TYP
660
560
100
620
8.2
85
50
80
13
15
11
50
80
70
14
16
10
MAX
MAX
N/A
.22
1.1
10
UNIT
UNIT
°C/W
Volts
Ib•in
N•m
m
m
gm
nC
pF
µ
ns
ns
oz
V
A
s
J
J