APT45GP120JDQ2 Microsemi Power Products Group, APT45GP120JDQ2 Datasheet - Page 5

• Manufacturer Part Number: APT45GP120JDQ2
• Description: IGBT 1200V 75A 329W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 4nF @ 25V
• Power - Max: 329W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120JDQ2MI; APT45GP120JDQ2MI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
100
V
10
Junction
temp. (°C)
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
10
RC MODEL
-4
0.0339
0.0806
0.265
30
40
RECTANGULAR PULSE DURATION (SECONDS)
10
C
C
C
oes
-3
ies
res
0.0004
0.0269
0.608
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
90
50
10
5
1
10
T
T
D = 50 %
V
R
J
C
CE
G
= 125
Figure 18,Minimim Reverse Bias Safe Operating Area
= 75
= 5Ω
180
160
140
120
100
= 800V
80
60
40
20
20
0
°
I
°
C
C
0 100 200 300 400 500 600 700 800 900 1000
C
V
, COLLECTOR CURRENT (A)
10
CE
-1
30
, COLLECTOR TO EMITTER VOLTAGE
40
Note:
Peak T J = P DM x Z θJC + T C
Duty Factor D =
50
1.0
t 1
60
t 2
APT45GP120JDQ2
t 1
70
/
t 2
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f