APT100GT120JU3 Microsemi Power Products Group, APT100GT120JU3 Datasheet - Page 4

• Manufacturer Part Number: APT100GT120JU3
• Description: IGBT 1200V 140A 480W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Trench + Field Stop IGBT®r

Specifications of APT100GT120JU3

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

200
150
100
200
150
100
25
20
15
10
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
50
0.3
0.2
0.1
5
0
0
0
0.00001
0
0
0
5
V
T
Output Characteristics (V
V
I
CE
C
J
GE
= 125°C
= 100A
= 600V
0.05
6
0.3
=15V
0.5
0.7
0.9
0.1
Transfert Characteristics
5
Gate Resistance (ohms)
1
T
7
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
10
0.0001
V
8
V
CE
GE
2
(V)
T
(V)
J
9
15
=25°C
GE
Eon
T
10
=15V)
J
=125°C
3
T
20
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
Eoff
11
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Single Pulse
25
12
4
0.01
240
200
160
120
200
150
100
25
20
15
10
80
40
50
5
0
0
0
0
0
0
V
R
T
V
T
R
APT100GT120JU3
Energy losses vs Collector Current
V
T
CE
J
GE
J
G
25
G
0.1
GE
=125°C
= 125°C
J
=3.9 Ω
Reverse Safe Operating Area
= 3.9 Ω
= 600V
=15V
= 125°C
= 15V
400
50
Eoff
1
Output Characteristics
75 100 125 150 175 200
V
GE
I
C
V
=17V
800
V
CE
(A)
CE
2
(V)
1
(A)
1200
V
GE
3
V
V
=15V
GE
GE
Eon
=13V
=9V
1600
10
4
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