APT150GT120JR Microsemi Power Products Group, APT150GT120JR Datasheet - Page 4

• Manufacturer Part Number: APT150GT120JR
• Description: IGBT 1200V 170A 830W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT150GT120JR

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 170A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 830W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GT120JRMI; APT150GT120JRMI

Typical Performance Curves
FIGURE 15, Switching Energy Losses vs Gate Resistance
100
400
350
300
250
200
150
100
100
FIGURE 13, Turn-On Energy Loss vs Collector Current
300
250
200
150
100
80
60
40
20
50
80
60
40
20
50
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
0
0
0
0
I
0
0
I
0
0
CE
I
CE
CE
V
T
R
L = 100µH
R
V
V
R
V
V
T
CE
J
G
CE
GE
G
, COLLECTOR-TO-EMITTER CURRENT (A)
J
G
CE
GE
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
= 25°C
= 125°C
= 2.2Ω
= 2.2Ω
=
= 800V
= 800V
= +15V
= 800V
= +15V
R
50
50
50
2.2Ω, L
G
4
V
, GATE RESISTANCE (OHMS)
,
GE
or 125°C
100
100
100
=
= 15V
T
J
100
=
8
125°C
µ
T
E
H, V
J
on2,
150
150
150
=
E
150A
CE
on2,
25 or 125°C,V
300A
=
12
800V
200
200
200
T
J
16
GE
=
250
250
250
E
25°C
E
=
E
E
off,
off,
on2,
off,
15V
300A
150A
75A
75A
300
300
300
20
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn-Off Energy Loss vs Collector Current
750
600
450
300
150
250
200
150
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
100
FIGURE 12, Current Fall Time vs Collector Current
30
25
20
15
10
40
20
50
80
60
0
0
5
0
0
I
I
I
CE
CE
CE
0
0
0
0
V
V
R
V
V
R
V
R
L = 100µH
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
CE
G
= 2.2Ω
= 2.2Ω
= 800V
V
= +15V
=
= 800V
= +15V
T
=
GE
50
40
J
2.2Ω
, JUNCTION TEMPERATURE (°C)
800V
50
25
=15V,T
E
on2,
T
150A
J
100
R
80
=
J
G
=125°C
25°C, V
100
=
50
T
2.2Ω, L
J
120
150
=
GE
125°C
T
V
J
=
150
GE
=
75
=
15V
100
E
=15V,T
125°C, V
160
200
on2,
T
µ
J
H, V
300A
=
E
25°C
off,
J
100
200
=25°C
CE
250
150A
GE
E
200
off,
E
APT150GT120JR
E
=
on2,
300A
=
off,
800V
75A
75A
15V
300
250
125
240