APTGF25X120T3G Microsemi Power Products Group, APTGF25X120T3G Datasheet - Page 6

• Manufacturer Part Number: APTGF25X120T3G
• Description: IGBT MODULE NPT 3PH BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF25X120T3G

• Igbt Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF25X120T3GMP

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
0.00001
100
0
10
Capacitance vs Collector to Emitter Voltage
0
0.05
0.9
0.5
0.3
0.1
0.7
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cres
Cies
Single Pulse
50
0.01
120
100
80
60
40
20
0
Operating Frequency vs Collector Current
APTGF25X120T3G
0
switching
Hard
0.1
I
C
10
, Collector Current (A)
20
1
V
D = 50%
R
T
T
J
C
G
CE
= 75°C
= 125°C
= 22Ω
30
= 600V
10
40
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