APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet

IGBT 1200V 149A 625W SOT227

APT60GF120JRDQ3

Manufacturer Part Number
APT60GF120JRDQ3
Description
IGBT 1200V 149A 625W SOT227
Manufacturer
Microsemi Power Products Group
Datasheets
1.APT60GF120JRDQ3.pdf (9 pages)
2.APT60GF120JRDQ3.pdf (9 pages)

Specifications of APT60GF120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 100A
Current - Collector (ic) (max)
149A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
7.08nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT60GF120JRDQ3MI
APT60GF120JRDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT60GF120JRDQ3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT60GF120JRDQ3
Quantity:
123
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Anti-parallel Diode
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
CES
CM
C1
C2
GE
D
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
FAST IGBT & FRED
1
(V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 100°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 500µA, T
GE
GE
C
C
= 0V, I
= 100A, T
= 100A, T
= 0V, T
= 0V, T
C
j
= 350µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
4.5
APT60GF120JRDQ3
300A @ 1200V
APT60GF120JRDQ3
-55 to 150
1200
±30
149
300
625
TYP
79
5.5
2.5
3.1
APT60GF120JRDQ3
ISOTOP
1200V
G
MAX
±100
0.35
6.5
3.0
3.0
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
mA
nA

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APT60GF120JRDQ3 Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT60GF120JRDQ3 APT60GF120JRDQ3 ISOTOP ® 25°C unless otherwise specified. C APT60GF120JRDQ3 1200 ±30 149 79 300 300A @ 1200V 625 -55 to 150 MIN TYP MAX 1200 4.5 5.5 6.5 2.5 3.0 3 ...

Page 2

... 1.0Ω +25° Inductive Switching (125° 800V 15V 100A 1.0Ω +125° APT60GF120JRDQ3 MIN TYP MAX 7080 785 435 10.0 685 80 420 = GE 300 = 1200V 44 100 460 38 14.6 16.4 6.5 44 100 540 125 14.6 21.4 9.2 MIN TYP MAX ...

Page 3

V = 15V GE 160 T = -55°C J 140 120 T = 25°C J 100 125° 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 COLLECTER-TO-EMITTER VOLTAGE ...

Page 4

V = 15V 800V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = = ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS (° 0.0358 ° 125 C J 19. 800V 1.0Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT60GF120JRDQ3 200 400 600 800 1000 1200 1400 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 ° min (f max f = max1 ...

Page 6

APT60DQ120 90% t d(off) 90 10% 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125° 125° d(on 90% 5% ...

Page 7

... EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT60GF120JRDQ3 = 25°C unless otherwise specified. C APT60GF120JRDQ3 60 73 540 MIN TYP MAX 2.5 3.07 1.82 MIN ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. ...

Page 9

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT60GF120JRDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

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