APTGL180A120T3AG Microsemi Power Products Group, APTGL180A120T3AG Datasheet - Page 5

• Manufacturer Part Number: APTGL180A120T3AG
• Description: IGBT ARRAY 1200V 230A 940W SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL180A120T3AG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 150A
• Current - Collector (ic) (max): 230A
• Current - Collector Cutoff (max): 300µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 940W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGL180A120T3AGMP; APTGL180A120T3AGMP

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0
0.35
0.25
0.15
0.05
Operating Frequency vs Collector Current
0.4
0.3
0.2
0.1
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
40
0.05
ZVS
80
0.0001
ZCS
I
120
C
(A)
160
Diode
V
D=50%
R
T
Tc=75°C
CE
J
G
=150°C
=3 Ω
=600V
200
Rectangular Pulse Duration in Seconds
0.001
240
www.microsemi.com
Single Pulse
0.01
APTGL180A120T3AG
300
250
200
150
100
50
0
0
0.1
Forward Characteristic of diode
0.5
1
1.5
T
V
J
=125°C
F
1
(V)
2
T
2.5
J
=25°C
3
10
3.5
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