APTGF500U60D4G Microsemi Power Products Group, APTGF500U60D4G Datasheet
APTGF500U60D4G
Specifications of APTGF500U60D4G
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APTGF500U60D4G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF500U60D4G V I Application • 1 Welding converters • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGF500U60D4G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25° 15V ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D4 Package outline APTGF500U60D4G Min IGBT Diode 2500 -40 -40 - www.microsemi.com Typ Max Unit 0.055 ° ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.06 0.9 0.05 0.7 0.04 0.5 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF500U60D4G =15V) GE 1200 T T =25°C 1000 J 800 T =125°C J 600 400 200 0 2 2.5 3 3.5 0 (V) ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF500U60D4G Forward Characteristic of diode 1200 ...