APTGF300DA120G Microsemi Power Products Group, APTGF300DA120G Datasheet - Page 5

• Manufacturer Part Number: APTGF300DA120G
• Description: IGBT NPT BOOST CHOP 1200V 400A S
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300DA120G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
100
80
60
40
20
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.7
0.5
0.1
hard
0.3
50
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
100 150 200 250 300 350
ZVS
0.0001
I
C
ZCS
(A)
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=3 Ω
=600V
www.microsemi.com
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
Diode
0.01
1000
800
600
400
200
0
APTGF300DA120G
0
0.1
Forward Characteristic of diode
0.5
1
T
V
J
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
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