APTGT600U120D4G Microsemi Power Products Group, APTGT600U120D4G Datasheet
APTGT600U120D4G
Specifications of APTGT600U120D4G
APTGT600U120D4GMI
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APTGT600U120D4G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT600U120D4G V I Application 1 • Welding converters • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGT600U120D4G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 600A T = 125°C C ...
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... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D4 Package outline APTGT600U120D4G IGBT Diode M6 M4 www.microsemi.com Min Typ Max Unit 0.05 °C/W 0.075 2500 V -40 150 ° ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 0.05 0.9 0.04 0.7 0.03 0.5 0.02 0.3 0.1 0.01 0.05 0 0.00001 0.0001 APTGT600U120D4G =15V) GE 1200 1000 T =125°C J 800 600 400 200 (V) Energy losses vs Collector Current ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT600U120D4G Forward Characteristic of diode 1200 ...